VS-400U(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 400 A FEATURES Wide current range High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Designed and qualified for industrial level Material categorization: for definitions of compliance DO-205AB (DO-9) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRODUCT SUMMARY Converters I 400 A F(AV) Power supplies Package DO-205AB (DO-9) Machine tool controls Circuit configuration Single diode High power drives MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 400 A I F(AV) T 120 C C I 630 A F(RMS) 50 Hz 8250 I A FSM 60 Hz 8640 50 Hz 340 2 2 I t kA s 60 Hz 311 V Range 800 to 1600 V RRM T -40 to 200 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 80 800 900 VS-400U(R) 120 1200 1300 15 160 1600 1700 Revision: 22-Jun-17 Document Number: 93510 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-400U(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 400 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 120 C Maximum RMS forward current I DC at 110 C case temperature 630 A F(RMS) t = 10 ms 8250 No voltage reapplied t = 8.3 ms 8640 Maximum peak, one cycle forward, I A FSM non-repetitive surge current t = 10 ms 6940 100 % V RRM reapplied t = 8.3 ms 7270 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 340 No voltage reapplied t = 8.3 ms 311 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 241 100 % V RRM reapplied t = 8.3 ms 220 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 3400 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.77 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.85 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.49 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 0.49 f2 F(AV) J J slope resistance Maximum forward voltage drop V I = 1500 A, T = T maximum, t = 10 ms sinusoidal wave 1.62 V FM pk J J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and T , T -40 to 200 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.15 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.04 thCS case to heatsink Maximum allowed mounting torque Not lubricated threads 27 N m 10 % Approximate weight 250 g Case style See dimensions - link at the end of datasheet DO-205AB (DO-9) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.020 0.013 120 0.023 0.023 90 0.029 0.031 T = T maximum K/W J J 60 0.042 0.044 30 0.073 0.074 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 22-Jun-17 Document Number: 93510 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000