4N25-X, 4N26-X, 4N27-X, 4N28-X www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES Isolation test voltage 5000 V RMS Interfaces with common logic families 1 6 A B Input-output coupling capacitance < 0.5 pF Industry standard dual-in-line 6-pin package C 2 5 C Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC NC 3 4 E APPLICATIONS AC mains detection i179004-14 Reed relay driving Switch mode power supply feedback DESCRIPTION Telephone ring detection The 4N25 family is an Industry Standard Single Channel Phototransistor Coupler. This family includes the 4N25, 4N26, Logic ground isolation 4N27, 4N28. Each optocoupler consists of gallium arsenide Logic coupling with high frequency noise rejection infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to AGENCY APPROVALS comply with a 5300 V isolation test voltage. This isolation RMS UL file no. E52744 performance is accomplished through special Vishay manufacturing process. cUL tested to CSA 22.2 bulletin 5A Compliance to DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 DIN EN 60747-5-5 pending partial discharge isolation (pending), available with option 1 specification is available by ordering option 1. BSI: EN 60065, EN 60950-1 These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available FIMKO for a commercial plastic phototransistor optocoupler. CQC The devices are also available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note For additional design information see application note 45 normalized curves ORDERING INFORMATION DIP-6 Option 6 4 N 2 x - X 0 T 7.62 mm 10.16 mm PART NUMBER PACKAGE OPTION TAPE AND Option 7 Option 9 REEL > 8 mm 8 mm typ. AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, BSI, FIMKO 20 10 DIP-6 4N25-X000 - 4N27-X000 - DIP-6, 400 mil, option 6 4N25-X006 4N26-X006 - - SMD-6, option 7 4N25-X007T - 4N27-X007 - (1) (1) (1) (1) SMD-6, option 9 4N25-X009T 4N26-X009T 4N27-X009T 4N28-X009T VDE, UL, cUL, BSI, FIMKO 20 10 DIP-6 4N25-X001 4N26-X001 - 4N28-X001 DIP-6, 400 mil, option 6 4N25-X016 4N26-X016 - - (1) (1) SMD-6, option 7 4N25-X017T 4N26-X017T 4N27-X017T - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes do not put T on end. Rev. 1.2, 16-Jan-12 Document Number: 81864 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 4N25-X, 4N26-X, 4N27-X, 4N28-X www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Surge current t 10 s I 2.5 A FSM Power dissipation P 70 mW diss OUTPUT Collector emitter breakdown voltage V 70 V CEO Emitter base breakdown voltage V 7V EBO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Output power dissipation P 150 mW diss COUPLER Isolation test voltage V 5000 V ISO RMS Creepage distance 7mm Clearance distance 7mm Isolation thickness between emitter and 0.4 mm detector Comparative tracking index DIN IEC 112/VDE0303, part 1 175 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 100 C j (1) Soldering temperature 2 mm from case, 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT (1) Forward voltage I = 50 mA V 1.36 1.5 V F F (1) Reverse current V = 3.0 V I 0.1 100 A R R Capacitance V = 0 V C 25 pF R O OUTPUT (1) Collector base breakdown voltage I = 100 A BV 70 V C CBO (1) Collector emitter breakdown voltage I = 1.0 mA BV 30 V C CEO (1) Emitter collector breakdown voltage I = 100 A BV7V E ECO 4N25 5 50 nA 4N26 5 50 nA (1) I (dark) V = 10 V, (base open) CEO CE 4N27 5 50 nA 4N28 10 100 nA V = 10 V, (1) CB I (dark) 2.0 20 nA CBO (emitter open) Collector emitter capacitance V = 0 C 6.0 pF CE CE COUPLER (1) Isolation test voltage Peak, 60 Hz V 5000 V IO Saturation voltage, collector emitter I = 2.0 mA, I = 50 mA V 0.5 V CE F CE(sat) (1) Resistance, input output V = 500 V R 100 G IO IO Capacitance, input output f = 1 MHz C 0.5 pF IO Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively. Rev. 1.2, 16-Jan-12 Document Number: 81864 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000