X-On Electronics has gained recognition as a prominent supplier of 4N33/VSY Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. 4N33/VSY Transistor Output Optocouplers are a product manufactured by Vishay. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

4N33/VSY Vishay

4N33/VSY electronic component of Vishay
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Part No.4N33/VSY
Manufacturer: Vishay
Category: Transistor Output Optocouplers
Description: 4N33 OPTOCOUPLER DARL 6PIN DIP
Datasheet: 4N33/VSY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4771 ea
Line Total: USD 0.48 
Availability - 0
Ship by Wed. 06 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 06 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4771
10 : USD 0.2386
50 : USD 0.2147
250 : USD 0.1789
500 : USD 0.161

   
Manufacturer
Product Category
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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We are delighted to provide the 4N33/VSY from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 4N33/VSY and other electronic components in the Transistor Output Optocouplers category and beyond.

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4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES 1 6 A B Very high current transfer ratio, 500 % min. 11 High isolation resistance, 10 typical C 2 5 C Standard plastic DIP package NC 3 4 E Compliant to RoHS Directive to 2002/95/EC i179005 1 and in accordance WEEE 2002/96/EC V DE AGENCY APPROVALS i179005 UL1577, file no. E52744 system code H DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 DESCRIPTION (pending), avialable with option 1 The 4N32 and 4N33 are optically coupled isolators with a BSI IEC60950 IEC60065 gallium arsenide infrared LED and a solicon photodarlington FIMKO sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. ORDERING INFORMATION DIP Option 6 4 N 3 - X 0 T 10.16 mm 7.62 mm PART NUMBER PACKAGE OPTION TAPE AND REEL Option 7 Option 9 > 0.1 mm > 0.7 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, BSI, FIMKO 500 500 DIP-6 4N32 4N33 DIP-6, 400 mil, option 6 4N32-X006 - (1) (1) SMD-6, option 7 4N32-X007T 4N33-X007T (1) (1) SMD-6, option 9 4N32-X009T 4N33-X009T VDE, UL, BSI, FIMKO 500 500 DIP-6 4N32-X001 4N33-X001 (1) SMD-6, option 7 4N32-X017T 4N33-X017T Notes Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. Document Number: 81865 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.2, 15-Feb-11 1 4N32, 4N33 Optocoupler, Photodarlington Vishay Semiconductors Output, High Gain, with Base Connection ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 3V R Forward current I 60 mA F Power dissipation P 100 mW diss Derate linearly from 55 C 1.33 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter base breakdown voltage BV 8V EBO Collector base breakdown voltage BV 50 V CBO Emitter collector breakdown voltage BV 5V ECO Collector (load) current I 100 mA C Power dissipation P 150 mW diss Derate linearly 2mW/C COUPLER Total dissipation P 250 mW tot Derate linearly 3.3 mW/C Isolation test voltage (between emitter 1 s V 5300 V ISO RMS Leakage path 7 mm min. Air path 7 mm min. 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb (1) Lead soldering time at 260 C 10 s Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.5 V F F Reverse current V = 3 V I 0.1 100 A R R Capacitance V = 0 V C 25 pF R O OUTPUT (1) Collector emitter breakdown voltage I = 100 A, I = 0 BV 30 V C F CEO (1) Collector base breakdown voltage I = 100 A, I = 0 BV 50 V C F CBO (1) Emitter base breakdown voltage I = 100 A, I = 0 BV8V C F EBO (1) Emitter collector breakdown voltage I = 100 A, I = 0 BV 510 V C F ECO Collector emitter leakage current V = 10 V, I = 0 I 1 100 nA CE F CEO I = 0.5 mA, V = 5 V h 13 C CE FE COUPLER Collector emitter saturation voltage V 1V CEsat Coupling capacitance 1.5 pF Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Indicates JEDEC registered values. www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 81865 2 Rev. 1.2, 15-Feb-11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC COMPONENTS
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BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
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GS
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Micro-Measurements (Division of Vishay Precision Group)
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SIX
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VIR
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Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
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Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
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Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
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Vishay BC Components
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VISHAY CERA-MITE
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VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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VishaySemiconductors
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VIT
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