4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES Isolation test voltage 5000 V RMS Interfaces with common logic families 1 6 A B Input-output coupling capacitance < 0.5 pF Industry standard dual-in-line 6 pin package C 2 5 C Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC NC 3 4 E APPLICATIONS AC mains detection i179004-14 Reed relay driving DESCRIPTION Switch mode power supply feedback This datasheet presents five families of Vishay industry Telephone ring detection standard single channel phototransistor couplers. These Logic ground isolation families include the 4N35, 4N36, 4N37, 4N38 couplers. Logic coupling with high frequency noise rejection Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 V isolation test voltage. RMS UL file no. E52744 (pending) This isolation performance is accomplished through Vishay cUL tested to CSA 22.2 bulletin 5A double molding isolation manufacturing process. Comliance DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 to DIN EN 60747-5-5 partial discharge isolation specification (pending), available with option 1 is available for these families by ordering option 1. BSI: EN 60065, EN 60950-1 These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available FIMKO for a commecial plastic phototransistor optocoupler. CQC The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note For additional design information see application note 45 normalized curves ORDERING INFORMATION DIP-6 Option 6 4 N 3 x - X 0 T 7.62 mm 10.16 mm PART NUMBER PACKAGE OPTION TAPE AND Option 7 Option 9 REEL > 8 mm 8 mm typ. CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA 20 mA UL, cUL, BSI, FIMKO 100 20 DIP-6 4N35-X000 4N36-X000 4N37-X000 4N38 DIP-6, 400 mil, option 6 4N35-X006 - 4N37-X006 - (1) (1) SMD-6, option 7 4N35-X007T 4N36-X007 4N37-X007 4N38-X007T (1) (1) SMD-6, option 9 4N35-X009T 4N36-X009T 4N37-X009 4N38-X009T VDE, UL, cUL, BSI, FIMKO 100 20 DIP-6 4N35-X001 - 4N37-X001 - DIP-6, 400 mil, option 6 4N35-X016 - - - (1) SMD-6, option 7 4N35-X017T -- - SMD-6, option 9 4N35-X019T - - - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes do not put T on end. Rev. 1.8, 16-Jan-12 Document Number: 83717 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Surge current t 10 s I 2.5 A FSM Power dissipation P 70 mW diss OUTPUT Collector emitter breakdown voltage V 70 V CEO Emitter base breakdown voltage V 7V EBO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Output power dissipation P 150 mW diss COUPLER Isolation test voltage t = 1 s V 5000 V ISO RMS Creepage distance 7mm Clearance distance 7mm Isolation thickness between emitter 0.4 mm and detector Comparative tracking index DIN IEC 112/VDE 0303, part 1 175 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb (1) Soldering temperature 2 mm from case, 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT I = 10 mA V 1.2 1.5 V F F (1) Forward voltage I = 10 mA, T = - 55 C V 0.9 1.3 1.7 V F amb F (1) Reverse current V = 6 V I 0.1 10 A R R Capacitance V = 0 V, f = 1 MHz C 25 pF R O OUTPUT 4N35 BV 30 V CEO 4N36 BV 30 V CEO Collector emitter breakdown I = 1 mA (1) C voltage 4N37 BV 30 V CEO 4N38 BV 80 V CEO Emitter collector breakdown I = 100 A BV7V E ECO (1) voltage 4N35 BV 70 V CBO 4N36 BV 70 V Collector base breakdown CBO I = 100 A, I = 1 A C B (1) voltage 4N37 BV 70 V CBO 4N38 BV 80 V CBO Rev. 1.8, 16-Jan-12 Document Number: 83717 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000