333 3 AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Avalanche Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.0 mm Ideal for automated placement Glass passivated pellet chip junction Ultrafast recovery times for high frequency Low reverse current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMP (DO-220AA) AEC-Q101 qualified Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for 3D Models ultrafast switching speeds of AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. PRIMARY CHARACTERISTICS I 1.0 A F(AV) MECHANICAL DATA V 200 V, 400 V, 600 V, 800 V, 1000 V RRM Case: SMP (DO-220AA) I 30 A, 25 A FSM Molding compound meets UL 94 V-0 flammability rating t 75 ns rr Base P/N-M3 - halogen-free, RoHS-compliant, and I 1 A commercial grade R Base P/NHM3 - halogen-free, RoHS-compliant, and E 20 mJ AS automotive grade V at I = 1.0 A 1.6 V F F Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMP (DO-220AA) M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL AU1PD AU1PG AU1PJ AU1PK AU1PM UNIT Device marking code AUD AUG AUJ AUK AUM Maximum repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Average forward current I 1.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 30 25 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 1.0 A, T = 25 C E 20 mJ AS A AS Operating junction and storage temperature range T , T -55 to +175 C J STG Revision: 01-Apr-2020 Document Number: 89291 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL AU1PD AU1PG AU1PJ AU1PK AU1PM UNIT T = 25 C 1.5 1.85 A Maximum instantaneous (1) I = 1.0 A V V F F forward voltage T = 125 C 1.4 1.6 A T = 25 C 1.0 A (2) Maximum reverse current Rated V I A R R T = 125 C 100 A I = 0.5 A, I = 1.0 A, F R Maximum reverse recovery time t 75 ns rr I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 11 7.5 pF J Notes (1) Pulse test:300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 c unless otherwise noted) A PARAMETER SYMBOL AU1PD AU1PG AU1PJ AU1PK AU1PM UNIT (1) R 132 JA Typical thermal resistance C/W (1) R 15 JM Note (1) Free air, mounted on recommended copper pad area. Thermal resistance R - junction to ambient, R - junction to mount at the terminal JA JM cathode band ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE AU1PJ-M3/84A 0.024 84A 3000 7 diameter plastic tape and reel AU1PJ-M3/85A 0.024 85A 10 000 13 diameter plastic tape and reel (1) AU1PJHM3/84A 0.024 84A 3000 7 diameter plastic tape and reel (1) AU1PJHM3/85A 0.024 85A 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 01-Apr-2020 Document Number: 89291 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000