B80C800DM-E3/45 Vishay

333 3 B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES Ideal for automated placement High surge current capability Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see ~ www.vishay.com/doc 99912 ~ TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, hom e appliances, office equipment, and telecommunication ~ applications. Case Style DFM MECHANICAL DATA LINKS TO ADDITIONAL RESOURCES Case: DFM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 3D Models Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 PRIMARY CHARACTERISTICS E3 suffix meets JESD 201 class 1A whisker test I 0.9 A F(AV) Polarity: as marked on body V 65 V, 125 V, 200 V, 400 V, 600 V RRM I 45 A FSM I 10 A R V at I = 0.9 A 1.0 V F F T max. 125 C J Package DFM Circuit configuration Quad MAXIMUM RATINGS (T = 25 C unless otherwise noted) A B40 B80 B125 B250 B380 PARAMETER SYMBOL UNIT C800DM C800DM C800DM C800DM C800DM Maximum repetitive peak reverse voltage V 65 125 200 400 600 V RRM Maximum RMS input voltage R- and C-load V 40 80 125 250 380 V RMS R- and L-load 0.9 Maximum average forward output current I A F(AV) for free air operation at T = 45 C A C-load 0.8 Maximum DC blocking voltage V 65 125 200 400 600 V DC Maximum peak working voltage V 90 180 300 600 900 V RWM Maximum non-repetitive peak voltage V 100 200 350 650 1000 V RSM Maximum repetitive peak forward surge current I 10 A FRM Peak forward surge current single sine-wave on rated load I 45 A FSM 2 2 Rating for fusing at T = 125 C (t < 100 ms) It 10 A s J Minimum series resistor C-load at V = 10 % R 1.0 2.0 4.0 8.0 12.0 RMS T + 50 % Maximum load capacitance C 5000 2500 1000 500 200 F L - 10 % Operating junction temperature range T -40 to +125 C J Storage temperature range T -40 to +150 C STG Revision: 03-Sep-2020 Document Number: 88533 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DB40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A B40 B80 B125 B250 B380 PARAMETER TEST CONDITIONS SYMBOL UNIT C800DM C800DM C800DM C800DM C800DM Maximum instantaneous forward 0.9 A V 1.0 V F voltage drop per diode Maximum reverse current at rated I 10 A R repetitive peak voltage per diode THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A B40 B80 B125 B250 B380 PARAMETER SYMBOL UNIT C800DM C800DM C800DM C800DM C800DM R 40 JA (1) Typical thermal resistance C/W R 15 JL Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5 x 0.5 (13 mm x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE B380C800DM-E3/45 0.416 45 50 Tube Revision: 03-Sep-2020 Document Number: 88533 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000