333 3 BAS16L www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Available Silicon epitaxial planar diode Fast switching diode Leadless ultra small DFN1006-2A package 1 2 (1 mm 0.6 mm 0.45 mm) Power dissipation better than SOT-23 Surface-mounted device (SMD) plastic package with visible and sidewall plated / wettable flanks LINKS TO ADDITIONAL RESOURCES Soldering can be checked by standard visual inspection. No X-ray inspection necessary to meet automotive AOI requirements 3D Models Models Application Notes AEC-Q101 qualified available MECHANICAL DATA Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Case: DFN1006-2A Weight: 0.83 mg Molding compound flammability rating: UL 94 V-0 Terminals: high temperature soldering guaranteed: Peak temperature max. 260 C Packaging codes / options: 08/10K per 7 reel (8 mm tape) PARTS TABLE PART ORDERING CODE AEC-Q101 QUALIFIED CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16L-G3-08 no BAS16L Single Tape and reel . BAS16L-HG3-08 yes ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 100 V R Forward current on FR-4 board with recommended soldering footprint I 250 mA F t = 1 s 9 p (1) Non repetitive forward current t = 1 ms I 1.7 A p FSM t = 1 s 0.5 p Repetitive peak forward current T = 100 C, t = 1 ms, D = 0.05 I 500 mA L p FRM on FR-4 board with recommended soldering footprint 300 mW Power dissipation P tot R = 100 K/W 1250 mW thJL Note (1) Square wave, T = 25 C prior to surge j THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to according to JEDEC 51-3 on FR-4 board with R 420 K/W thJA ambient air recommended soldering footprint Thermal resistance junction to lead R 100 K/W thJL Maximum junction temperature T 150 C j max. Storage temperature range T -55 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.2, 03-Dec-2021 Document Number: 86187 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D DBAS16L www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT I = 150 mA 1.250 V F I = 50 mA 1.0 V F Forward voltage V F I = 10 mA 0.86 V F I = 1 mA 0.715 V F V = 80 V I 500 nA R R Leakage current V = 80 V, T = 150 C I 100 A R J R V = 100 V I 1A R R Diode capacitance V = 0 V, f = 1 MHz C 0.36 2 pF R D Reverse recovery time I = 10 mA, I = 10 mA, i = 1 mA t 4ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Axis Title Axis Title 1000 10000 0.5 10000 f = 1 MHz 100 0.4 T = 150 C J 1000 1000 10 0.3 125 C 0.2 1 100 100 0.1 0.1 25 C 0 10 0.01 10 0 20406080 100 020 40 60 80 100 V (V) R V (V) R Fig. 1 - Typical Capacitance vs. Reverse Voltage Fig. 3 - Typical Reverse Leakage Current vs. Reverse Voltage Axis Title 1.5 10000 T = -40 C J 1.0 1000 T = 25 C J 0.5 100 T = 125 C J T = 150 C J 0 10 0.001 0.01 0.1 1 10 100 1000 I (mA) F Fig. 2 - Typical Forward Voltage vs. Forward Current Rev. 1.2, 03-Dec-2021 Document Number: 86187 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line V (V) C (pF) F D 1st line 1st line 2nd line 2nd line 2nd line I (A) R 1st line 2nd line