BAS40-00 to BAS40-06 www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual FEATURES These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guardring against excessive voltage, such as electrostatic discharges AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade BAS40-00 BAS40-04 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance 3 3 please see www.vishay.com/doc 99912 Top view MECHANICAL DATA 1 2 1 2 Case: SOT-23 Weight: approx. 8.8 mg BAS40-05 BAS40-06 Packaging codes/options: 3 3 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box Top view 1 221 DESIGN SUPPORT TOOLS click logo to get started Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS40-00-E3-08 or BAS40-00-E3-18 BAS40-00 Single 43 BAS40-00-HE3-08 or BAS40-00-HE3-18 BAS40-04-E3-08 or BAS40-04-E3-18 BAS40-04 Dual serial 44 BAS40-04-HE3-08 or BAS40-04-HE3-18 Tape and reel BAS40-05-E3-08 or BAS40-05-E3-18 BAS40-05 Common cathode 45 BAS40-05-HE3-08 or BAS40-05-HE3-18 BAS40-06-E3-08 or BAS40-06-E3-18 BAS40-06 Common anode 46 BAS40-06-HE3-08 or BAS40-06-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V = V = V 40 V RRM RWM R (1) Forward continuous current I 200 mA F (1) Surge forward current t < 1 s I 600 mA p FSM (1) Power dissipation P 200 mW tot Note (1) Device on fiberglass substrate, see layout on next page Rev. 2.2, 13-Feb-18 Document Number: 85701 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS40-00 to BAS40-06 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 500 K/W thJA Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +125 C op Note (1) Device on fiberglass substrate, see layout on next page ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 10 A (pulsed) V 40 V R (BR) Leakage current V = 30 V I 20 100 nA R R Forward voltage I = 1 mA V 380 mV F F (1) Forward voltage I = 40 mA V 1000 mV F F Diode capacitance V = 0 V, f = 1 MHz C 45 pF R D Reverse recovery time I = I = 10 mA, i = 1 mA, R = 100 t 5ns F R R L rr Note (1) Pulse test t < 300 s p LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 2.2, 13-Feb-18 Document Number: 85701 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000