333 3 BAS40L www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES This diode features very low turn-on voltage Available and fast switching This device is protected by a PN junction guard 1 2 ring against excessive voltage, such as electrostatic discharges Leadless ultra small DFN1006-2A package (1 mm 0.6 mm 0.45 mm) Power dissipation better than SOT-23 LINKS TO ADDITIONAL RESOURCES Surface-mounted device (SMD) plastic package with visible and sidewall plated / 3D Models Models Application wettable flanks Notes Soldering can be checked by standard visual MECHANICAL DATA inspection. No X-ray inspection necessary to meet Case: DFN1006-2A automotive AOI requirements Weight: 0.83 mg AEC-Q101 qualified available Molding compound flammability rating: UL 94 V-0 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Terminals: high temperature soldering guaranteed: Peak temperature max. 260 C Packaging codes/options: 08/10K per 7 reel (8 mm tape) PARTS TABLE PART ORDERING CODE AEC-Q101 QUALIFIED CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS40L-G3-08 no BAS40L Single A. Tape and reel BAS40L-HG3-08 yes ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 40 V R Forward current on FR-4 board with recommended soldering footprint I 200 mA F T = 25 C, t = 10 ms 500 j p Non-repetitive peak forward current T = 100 C, t = 10 ms I 200 mA j p FSM T = 125 C, t = 20 s 500 j p on FR-4 board with recommended soldering footprint 300 mW Power dissipation P tot R = 100 K/W 1250 mW thJL THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT according to JEDEC 51-3 on FR-4 board with Thermal resistance junction to ambient air R 420 K/W thJA recommended soldering footprint Thermal resistance junction to lead R 100 K/W thJL Maximum junction temperature T 150 C j max. Storage temperature range T -55 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.3, 03-Dec-2021 Document Number: 86189 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DBAS40L www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT V = 40 V, T = 25 C 10 A R j Leakage current V = 30 V, T = 150 C I 200 A R j R V = 40 V, T = 150 C 500 A R j I = 1 mA 400 mV F Forward voltage I = 10 mA V 560 mV F F I = 40 mA 1000 mV F Diode capacitance V = 0 V, f = 1 MHz C 2.9 pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Axis Title Axis Title 1000 10000 4 10000 f = 1 MHz 3.5 T = 150 C J 100 3 1000 1000 2.5 10 125 C 2 1 1.5 100 100 1 0.1 0.5 25 C 0 10 0.01 10 010 20 30 40 10 15 20 25 30 35 40 V (V) R V (V) R Fig. 1 - Typical Capacitance vs. Reverse Voltage Fig. 3 - Typical Reverse Leakage Current vs. Reverse Voltage Axis Title 1.5 10000 T = -40 C J 1.0 1000 T = 25 C J 0.5 100 T = 125 C J T = 150 C J 0 10 0.001 0.01 0.1 1 10 100 1000 I (mA) F Fig. 2 - Typical Forward Voltage vs. Forward Current Rev. 1.3, 03-Dec-2021 Document Number: 86189 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line V (V) C (pF) D F 1st line 1st line 2nd line 2nd line 2nd line I (A) R 1st line 2nd line