333 3 BAT165 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES AEC-Q101 qualified available Base P/N-G3 - RoHS-compliant, green, industrial grade Base P/N-HG3 - RoHS-compliant, green, AEC-Q101 qualified Material categorization: for definitions of compliance please see LINKS TO ADDITIONAL RESOURCES www.vishay.com/doc 99912 3D Models MECHANICAL DATA Case: MicroSMF (DO-219AC) Weight: 4.8 mg PARTS TABLE ORDERING CIRCUIT TYPE MINIMUM ORDER PART AEC-Q101 QUALIFIED TAPED UNITS PER REEL CODE CONFIGURATION MARKING QUANTITY BAT165-G3/H no BAT165 Single 165 4500 per 7 reel (8 mm tape) 22 500/box BAT165-HG3/H yes ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 40 V R (1) Forward continuous current I 750 mA F (1) Average rectified forward current I 500 mA F(AV) (1) Surge forward current t < 10 ms I 2.5 A p FSM On FR-4 board with recommended footprint P 290 mW tot for reflow soldering Power dissipation On FR-4 board with 20 mm x 20 mm footprint P 740 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On FR-4 board acc. JEDEC 51-3 R 430 K/W thJA with recommended footprint for reflow soldering Thermal resistance junction to ambient air On FR-4 board acc. JEDEC 51-3 R 170 K/W thJA with 20 mm x 20 mm footprint Thermal resistance junction to lead R 45 K/W thJL Junction temperature T 150 C j Operating temperature range T -55 to +150 C op Storage temperature range T -55 to +150 C stg Rev. 1.0, 25-Mar-2021 Document Number: 86134 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DBAT165 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A (pulsed) V 40 V R (BR) V = 40 V I 8A R R (1) Leakage current V = 40 V, T = 65 C I 900 A R j R I = 10 mA V 230 315 380 mV F F I = 100 mA V 320 390 470 mV F F (1) Forward voltage I = 250 mA V 350 440 540 mV F F I = 750 mA V 440 580 740 mV F F Diode capacitance V = 10 V, f = 1 MHz C 8.4 12 pF R D Note (1) Pulse test t 300 s, t /T < 0.02 p p PACKAGE DIMENSIONS in millimeters (inches): MicroSMF (DO-219AC) 0.5 0.3 1.3 0.1 1.9 0.1 cathode bar 2.5 0.1 foot print recommendation foot print recommendation for reflow soldering: for wave soldering: 1.5 0.8 3.1 4.4 22741 Document no.: S8-V-3910.03-001 (4) Created - Date: 02.Dec.2010 Rev. 5 - Date: 06.May. 2014 Rev. 1.0, 25-Mar-2021 Document Number: 86134 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 + 0.1 0.6 - 0.05 1.2 0.15 0.6 0.1 0.9