BY448 , BY458 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS 949539 High voltage rectification Efficiency diode in horizontal deflection circuits MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BY458 BY458TR 5000 per 10 tape and reel 25 000 BY458 BY458TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BY448 V = 1500 V, I = 2 A SOD-57 R FAV BY458 V = 1200 V, I = 2 A SOD-57 R FAV ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BY448 V = V 1500 V R RRM Reverse voltage See electrical characteristics BY458 V = V 1200 V R RRM Peak forward surge current t = 10 ms, half sine wave I 30 A p FSM Average forward current I 2A FAV Junction temperature T 140 C j Storage temperature range T - 55 to + 175 C stg Non repetitive reverse avalanche energy l = 0.4 A E 10 mJ (BR)R R MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.8, 27-Aug-12 Document Number: 86006 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BY448 , BY458 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT Forward voltage I = 3 A V -- 1.6 V F F V = V I -- 3 A R RRM R Reverse current V = V , T = 140 C I - - 140 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 2000 ns F R R rr Total reverse recovery time I = 1 A, - dI /dt = 0.05 A/s t - - 20 s F F rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 2.5 ll V = V R RRM 100 half sine wave 2.0 R = 45 K/W thJA 80 l = 10 mm 1.5 T = constant L 60 1.0 40 R = 100 K/W 0.5 thJA 20 PCB: d = 25 mm 0 0 0 5 10 15 202530 0725 505 100 125 150 16418 949101 l - Lead Length (mm) T - Ambient Temperature (C) amb Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 V = V R RRM T = 150 C j 10 100 1 T = 25 C j 0.1 10 0.01 0.001 1 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 16419 16417 V - Forward Voltage (V) T - Junction Temperature (C) F j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.8, 27-Aug-12 Document Number: 86006 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) F R - Ther. Resist. Junction/Ambient (K/W) thJA I - Reverse Current (A) I - Average Forward Current (A) R FAV