BYG23T-M3/TR3 Vishay

333 3 BYG23T-M3 www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Avalanche SMD Rectifiers FEATURES Glass passivated pellet chip junction Low profile package Ideal for automated placement Low reverse current High reverse voltage Ultra fast reverse recovery time SMA (DO-214AC) Meets MSL level 1, per J-STD-020, LF maximum peak Cathode Anode of 260 C Material categorization: for definitions of compliance ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 MECHANICAL DATA 3D Models Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and PRIMARY CHARACTERISTICS commercial grade I 1.0 A F(AV) Terminals: matte tin plated leads, solderable per V 1300 V RRM J-STD-002 and JESD 22-B102 I 18 A FSM M3 suffix meets JESD 201 class 2 whisker test t 75 ns rr Polarity: color band denotes the cathode end E 5 mJ R TYPICAL APPLICATIONS V at I = 1.0 A (T = 125 C) 1.39 V F F A For use in high voltage, high frequency rectification specially T max. 150 C J suited for freewheeling, clamping, snubbering in power Package SMA (DO-214AC) supply, ignition drive of HID, UHP and industrial ballast and Circuit configurations Single snubber for PDP TV power supply application. MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL BYG23T UNIT Device marking code BYG23T Maximum repetitive peak reverse voltage V 1300 V RRM (1) Maximum DC forward current (fig.1) I 1.0 A F Peak forward surge current 8.3 ms single half sine-wave I 18 A FSM superimposed on rated load Pulse energy in avalanche mode, non repetitive E 5mJ R (inductive load switch off) I = 0.4 A, T = 25 C (BR)R L Maximum operating junction temperature T 150 C J Storage temperature range T -55 to +150 C STG Note Free air, mounted on recommended copper pad area Revision: 25-Feb-2020 Document Number: 89429 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D BYG23T-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT T = 25 C 1.74 1.9 A (1) Instantaneous forward voltage I = 1.0 A V V F F T = 125 C 1.39 1.65 A T = 25 C -5.0 A (2) Reverse current V = 1300 V I A R R T = 125 C 2.9 50 A Maximum reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A T = 25 C t 65 75 F R rr A rr ns Forward recovery time t 620 - fr I = 1.5 A, dI/dt = 12 A/s, F T = 25 C A V = 1.1 x V max. F F Peak forward voltage V 9.0 - V FP Typical junction capacitance 4.0 V, 1 MHz C 9.0 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG23T UNIT R 120 JA (1) Typical thermal resistance C/W R 20 JM Note (1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R - junction to ambient, R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG23T-M3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYG23T-M3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel Revision: 25-Feb-2020 Document Number: 89429 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000