BZT52B3V6-G3-08 Vishay

BZT52-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES Silicon planar power Zener diodes The Zener voltages are graded according to the international E24 standard AEC-Q101 qualified ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Base P/N-G3 - green, commercial grade Material categorization: For definitions of compliance please see PRIMARY CHARACTERISTICS www.vishay.com/doc 99912 PARAMETER VALUE UNIT V range nom. 2.4 to 75 V Z Test current I 2.5 5 mA ZT V specification Pulse current Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT52C2V4-G3-08 to BZT52C75-G3-08 3000 (8 mm tape on 7 reel) 15 000/box BZT52B2V4-G3-08 to BZT52B75-G3-08 BZT52-G-series BZT52C2V4-G3-18 to BZT52C75-G3-18 10 000 (8 mm tape on 13 reel) 10 000/box BZT52B2V4-G3-18 to BZT52B75-G3-18 PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 SOD-123 9.4 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm P 500 mW tot 2 5 mm pad areas Power dissipation Diode on ceramic substrate 0.7 mm P 410 mW tot 2 2.5 mm pad areas Zener current See Table Electrical Characteristics Valid provided that electrodes are kept at Thermal resistance junction to ambient air R 300 K/W thJA ambient temperature Junction temperature T 150 C j T Storage temperature range - 65 to + 150 C stg Operating temperature range T - 55 to + 150 C op Rev. 1.3, 27-Feb-13 Document Number: 83340 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BZT52-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb ADMISSABLE ZENER VOLTAGE TEST REVERSE DYNAMIC TEMP. ZENER (1) RANGE CURRENT VOLTAGE RESISTANCE COEFFICIENT (4) CURRENT I at I at MARKING Z Z PART NUMBER V at I I I V at I Z at I Z at I T = T = CODE Z ZT1 ZT1 ZT2 R R Z ZT1 ZK ZT2 VZ amb amb 45 C 25 C -4 V mA V nA 10 /C mA MIN. NOM. MAX. BZT52C2V4-G Y1 2.2 2.4 2.6 5 1 - 100 85 600 - 9 to - 4 - - BZT52C2V7-G Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 - 9 to - 4 113 134 BZT52C3V0-G Y3 2.8 3.0 3.2 5 1 - 100 80 (< 95) < 500 - 9 to - 3 98 118 BZT52C3V3-G Y4 3.1 3.3 3.5 5 1 - 100 80 (< 95) < 500 - 8 to - 3 92 109 BZT52C3V6-G Y5 3.4 3.6 3.8 5 1 - 100 80 (< 95) < 500 - 8 to - 3 85 100 BZT52C3V9-G Y6 3.7 3.9 4.1 5 1 - 100 80 (< 95) < 500 - 7 to - 3 77 92 BZT52C4V3-G Y7 4 4.3 4.6 5 1 - 100 80 (< 95) < 500 - 6 to - 1 71 84 BZT52C4V7-G Y8 4.4 4.7 5 5 1 - 100 70 (< 78) < 500 - 5 to + 2 64 76 BZT52C5V1-G Y9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 - 3 to + 4 56 67 BZT52C5V6-G YA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 - 2 to + 6 50 59 BZT52C6V2-G YB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 - 1 to + 7 45 54 BZT52C6V8-G YC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 + 2 to + 7 41 49 BZT52C7V5-G YD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 + 3 to + 7 37 44 BZT52C8V2-G YE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 + 4 to + 7 34 40 BZT52C9V1-G YF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 + 5 to + 8 30 36 BZT52C10-G YG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 + 5 to + 8 28 33 BZT52C11-G YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25 30 BZT52C12-G YI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 + 6 to + 9 23 28 BZT52C13-G YK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21 25 BZT52C15-G YL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19 23 BZT52C16-G YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17 20 BZT52C18-G YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15 18 BZT52C20-G YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14 17 BZT52C22-G YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13 16 BZT52C24-G YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11 13 BZT52C27-G YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10 12 BZT52C30-G YT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10 9 10 BZT52C33-G YU 31 33 35 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10 8 9 BZT52C36-G YW 34 36 38 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8 9 BZT52C39-G YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7 8 BZT52C43-G YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6 7 BZT52C47-G YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5 6 BZT52C51-G Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5 6 (2) (3) (2) BZT52C56-G Z2 52 56 60 2.5 1 - 100 < 135 < 1000 typ. + 10 -- (2) (3) (2) BZT52C62-G Z3 58 62 66 2.5 1 - 100 < 150 < 1000 typ. + 10 -- (2) (3) (2) BZT52C68-G Z4 64 68 72 2.5 1 - 100 < 200 < 1000 typ. + 10 -- (2) (3) (2) BZT52C75-G Z5 70 75 79 2.5 1 - 100 < 250 < 1000 typ. + 10 -- Notes I = 5 mA, I = 1 mA ZT1 ZT2 (1) Measured with pulses t = 5 ms p (2) I = 2.5 mA ZT1 (3) I = 0.5 mA ZT2 (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 27-Feb-13 Document Number: 83340 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000