X-On Electronics has gained recognition as a prominent supplier of BZT52C20-V-GS08 Zener Diodes across the USA, India, Europe, Australia, and various other global locations. BZT52C20-V-GS08 Zener Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

BZT52C20-V-GS08 Vishay

BZT52C20-V-GS08 electronic component of Vishay
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Part No.BZT52C20-V-GS08
Manufacturer: Vishay
Category: Zener Diodes
Description: Zener Diodes 20 Volt 0.41W 5%
Datasheet: BZT52C20-V-GS08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0267 ea
Line Total: USD 80.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0267

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vz - Zener Voltage
Voltage Tolerance
Voltage Temperature Coefficient
Zener Current
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZT52C20-V-GS08 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZT52C20-V-GS08 and other electronic components in the Zener Diodes category and beyond.

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BZT52-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES Available Silicon planar Zener diodes The Zener voltages are graded according to the international E24 standard AEC-Q101 qualified available ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Base P/N-E3 - RoHS-compliant, commercial PRIMARY CHARACTERISTICS grade PARAMETER VALUE UNIT Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified V range nom. 2.4 to 75 V Z Material categorization: for definitions of compliance Test current I 2.5 5 mA please see www.vishay.com/doc 99912 ZT V specification Pulse current Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 3000 (8 mm tape on 7 reel) 15 000/box BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52-series BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 10 000 (8 mm tape on 13 reel) 10 000/box BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 SOD-123 10.3 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT 2 Diode on ceramic substrate 0.7 mm 5 mm P 500 mW tot pad areas Power dissipation 2 Diode on ceramic substrate 0.7 mm 2.5 mm P 410 mW tot pad areas Zener current See table Electrical Characteristics Valid provided that electrodes are kept at Thermal resistance junction to ambient air R 300 K/W thJA ambient temperature T Junction temperature 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.9, 08-Nov-16 Document Number: 85760 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb ZENER VOLTAGE TEST REVERSE DYNAMIC TEMP. ADMISSABLE ZENER (1) (4) RANGE CURRENT VOLTAGE RESISTANCE COEFFICIENT CURRENT Z at Z at I at I at PART MARKING Z ZK Z Z V at I I I V at I Z ZT1 ZT1 ZT2 R R VZ I I T = 45 C T = 25 C NUMBER CODE ZT1 ZT2 amb amb -4 V mA V nA 10 /C mA MIN. NOM. MAX. BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - - BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6 WA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2 WB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8 WC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5 WD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2 WE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1 WF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12 WI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 (2) (3) (2) BZT52C56 X2 52 56 60 2.5 0.5 - - < 135 < 1000 typ. +10 -- (2) (3) (2) BZT52C62 X3 58 62 66 2.5 0.5 - - < 150 < 1000 typ. +10 -- (2) (3) (2) BZT52C68 X4 64 68 72 2.5 0.5 - - < 200 < 1000 typ. +10 -- (2) (3) (2) BZT52C75 X5 70 75 79 2.5 0.5 - - < 250 < 1500 typ. +10 -- Notes I = 5 mA, I = 1 mA ZT1 ZT2 (1) Measured with pulses t = 5 ms p (2) I = 2.5 mA ZT1 (3) I = 0.5 mA ZT2 (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 08-Nov-16 Document Number: 85760 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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