X-On Electronics has gained recognition as a prominent supplier of BZT52C4V7-G3-08 Zener Diodes across the USA, India, Europe, Australia, and various other global locations. BZT52C4V7-G3-08 Zener Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

BZT52C4V7-G3-08 Vishay

BZT52C4V7-G3-08 electronic component of Vishay
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Part No.BZT52C4V7-G3-08
Manufacturer: Vishay
Category: Zener Diodes
Description: Zener Diodes 4.7 Volt 0.41W 5%
Datasheet: BZT52C4V7-G3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1584 ea
Line Total: USD 0.16 
Availability - 23099
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23099
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1584
10 : USD 0.1056
100 : USD 0.0528
1000 : USD 0.0495
2500 : USD 0.0385
10000 : USD 0.0352
15000 : USD 0.0308

   
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RoHS - XON
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Vz - Zener Voltage
Voltage Tolerance
Voltage Temperature Coefficient
Zener Current
Pd - Power Dissipation
Zz - Zener Impedance
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We are delighted to provide the BZT52C4V7-G3-08 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZT52C4V7-G3-08 and other electronic components in the Zener Diodes category and beyond.

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BZT52-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES Silicon planar power Zener diodes The Zener voltages are graded according to the international E24 standard AEC-Q101 qualified ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Base P/N-G3 - green, commercial grade Material categorization: For definitions of compliance please see PRIMARY CHARACTERISTICS www.vishay.com/doc 99912 PARAMETER VALUE UNIT V range nom. 2.4 to 75 V Z Test current I 2.5 5 mA ZT V specification Pulse current Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT52C2V4-G3-08 to BZT52C75-G3-08 3000 (8 mm tape on 7 reel) 15 000/box BZT52B2V4-G3-08 to BZT52B75-G3-08 BZT52-G-series BZT52C2V4-G3-18 to BZT52C75-G3-18 10 000 (8 mm tape on 13 reel) 10 000/box BZT52B2V4-G3-18 to BZT52B75-G3-18 PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 SOD-123 9.4 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm P 500 mW tot 2 5 mm pad areas Power dissipation Diode on ceramic substrate 0.7 mm P 410 mW tot 2 2.5 mm pad areas Zener current See Table Electrical Characteristics Valid provided that electrodes are kept at Thermal resistance junction to ambient air R 300 K/W thJA ambient temperature Junction temperature T 150 C j T Storage temperature range - 65 to + 150 C stg Operating temperature range T - 55 to + 150 C op Rev. 1.3, 27-Feb-13 Document Number: 83340 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BZT52-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb ADMISSABLE ZENER VOLTAGE TEST REVERSE DYNAMIC TEMP. ZENER (1) RANGE CURRENT VOLTAGE RESISTANCE COEFFICIENT (4) CURRENT I at I at MARKING Z Z PART NUMBER V at I I I V at I Z at I Z at I T = T = CODE Z ZT1 ZT1 ZT2 R R Z ZT1 ZK ZT2 VZ amb amb 45 C 25 C -4 V mA V nA 10 /C mA MIN. NOM. MAX. BZT52C2V4-G Y1 2.2 2.4 2.6 5 1 - 100 85 600 - 9 to - 4 - - BZT52C2V7-G Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 - 9 to - 4 113 134 BZT52C3V0-G Y3 2.8 3.0 3.2 5 1 - 100 80 (< 95) < 500 - 9 to - 3 98 118 BZT52C3V3-G Y4 3.1 3.3 3.5 5 1 - 100 80 (< 95) < 500 - 8 to - 3 92 109 BZT52C3V6-G Y5 3.4 3.6 3.8 5 1 - 100 80 (< 95) < 500 - 8 to - 3 85 100 BZT52C3V9-G Y6 3.7 3.9 4.1 5 1 - 100 80 (< 95) < 500 - 7 to - 3 77 92 BZT52C4V3-G Y7 4 4.3 4.6 5 1 - 100 80 (< 95) < 500 - 6 to - 1 71 84 BZT52C4V7-G Y8 4.4 4.7 5 5 1 - 100 70 (< 78) < 500 - 5 to + 2 64 76 BZT52C5V1-G Y9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 - 3 to + 4 56 67 BZT52C5V6-G YA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 - 2 to + 6 50 59 BZT52C6V2-G YB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 - 1 to + 7 45 54 BZT52C6V8-G YC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 + 2 to + 7 41 49 BZT52C7V5-G YD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 + 3 to + 7 37 44 BZT52C8V2-G YE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 + 4 to + 7 34 40 BZT52C9V1-G YF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 + 5 to + 8 30 36 BZT52C10-G YG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 + 5 to + 8 28 33 BZT52C11-G YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 + 5 to + 9 25 30 BZT52C12-G YI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 + 6 to + 9 23 28 BZT52C13-G YK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 + 7 to + 9 21 25 BZT52C15-G YL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 + 7 to + 9 19 23 BZT52C16-G YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 + 8 to + 9.5 17 20 BZT52C18-G YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 + 8 to + 9.5 15 18 BZT52C20-G YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 + 8 to + 10 14 17 BZT52C22-G YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 + 8 to + 10 13 16 BZT52C24-G YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 + 8 to + 10 11 13 BZT52C27-G YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 + 8 to + 10 10 12 BZT52C30-G YT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 + 8 to + 10 9 10 BZT52C33-G YU 31 33 35 5 1 > 25 100 40 (< 80) < 250 + 8 to + 10 8 9 BZT52C36-G YW 34 36 38 5 1 > 27 100 40 (< 90) < 250 + 8 to + 10 8 9 BZT52C39-G YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 + 10 to + 12 7 8 BZT52C43-G YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 + 10 to + 12 6 7 BZT52C47-G YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 + 10 to + 12 5 6 BZT52C51-G Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 + 10 to + 12 5 6 (2) (3) (2) BZT52C56-G Z2 52 56 60 2.5 1 - 100 < 135 < 1000 typ. + 10 -- (2) (3) (2) BZT52C62-G Z3 58 62 66 2.5 1 - 100 < 150 < 1000 typ. + 10 -- (2) (3) (2) BZT52C68-G Z4 64 68 72 2.5 1 - 100 < 200 < 1000 typ. + 10 -- (2) (3) (2) BZT52C75-G Z5 70 75 79 2.5 1 - 100 < 250 < 1000 typ. + 10 -- Notes I = 5 mA, I = 1 mA ZT1 ZT2 (1) Measured with pulses t = 5 ms p (2) I = 2.5 mA ZT1 (3) I = 0.5 mA ZT2 (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 27-Feb-13 Document Number: 83340 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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