X-On Electronics has gained recognition as a prominent supplier of BZT55C10-GS08 Zener Diodes across the USA, India, Europe, Australia, and various other global locations. BZT55C10-GS08 Zener Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

BZT55C10-GS08 Vishay

BZT55C10-GS08 electronic component of Vishay
BZT55C10-GS08 Vishay
BZT55C10-GS08 Zener Diodes
BZT55C10-GS08  Semiconductors

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Part No. BZT55C10-GS08
Manufacturer: Vishay
Category: Zener Diodes
Description: Zener Diodes 10 Volt 0.5W 5%
Datasheet: BZT55C10-GS08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.143 ea
Line Total: USD 0.14 
Availability - 15163
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2168
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0522
100 : USD 0.0428
300 : USD 0.0381
2500 : USD 0.0346
5000 : USD 0.0317
10000 : USD 0.0304

15163
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.143
10 : USD 0.0957
100 : USD 0.0473
1000 : USD 0.044
2500 : USD 0.0297
12500 : USD 0.0264
50000 : USD 0.0253

7275
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 7500
Multiples : 7500
7500 : USD 0.0308
12500 : USD 0.0275
50000 : USD 0.0256

   
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Voltage Temperature Coefficient
Zener Current
Pd - Power Dissipation
Maximum Reverse Leakage Current
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Test Current
Package Case
Brand
Power Dissipation
Maximum Zener Impedance
Factory Pack Quantity :
Zener Voltage
Rohs Mouser
Diameter
Length
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZT55C10-GS08 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZT55C10-GS08 and other electronic components in the Zener Diodes category and beyond.

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BZT55-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V range nom. 2.4 to 75 V Z Test current I 2.5 to 5 mA ZT V specification Pulse current Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZT55-series BZT55-series-GS18 10 000 per 13 reel 10 000/box BZT55-series BZT55-series-GS08 2500 per 7 reel 12 500/box PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY SOLDERING PACKAGE NAME WEIGHT FLAMMABILITY RATING LEVEL CONDITIONS MSL level 1 QuadroMELF SOD-80 34 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation R 300 K/W P 500 mW thJA tot Zener current I P /V mA Z V Z On PC board Junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T - 65 to + 175 C stg Forward voltage (max.) I = 200 mA V 1.5 V F F Rev. 1.7, 22-Nov-11 Document Number: 85637 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BZT55-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb ZENER VOLTAGE TEST REVERSE LEAKAGE DYNAMIC TEMPERATURE (1) RANGE CURRENT CURRENT RESISTANCE COEFFICIENT I at V Z at I Z at I R R Z ZT1 ZK ZT2 V at I I I TK PART NUMBER Z ZT1 ZT1 ZT2 T = T = VZ amb amb f = 1 kHz 25 C 150 C V mA A V %/K MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZT55C2V4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06 BZT55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06 BZT55C3V0 2.8 3.0 3.2 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55C3V3 3.1 3.3 3.5 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55C3V6 3.4 3.6 3.8 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55C3V9 3.7 3.9 4.1 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05 BZT55C4V3 4 4.3 4.6 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03 BZT55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02 BZT55C5V1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02 BZT55C5V6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05 BZT55C6V2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06 BZT55C6V8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07 BZT55C7V5 7 7.5 7.9 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07 BZT55C8V2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08 BZT55C9V1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09 BZT55C10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1 BZT55C11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11 BZT55C12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11 BZT55C13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11 BZT55C15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11 BZT55C16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11 BZT55C18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11 BZT55C20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11 BZT55C22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12 BZT55C24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12 BZT55C27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12 BZT55C30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12 BZT55C33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12 BZT55C36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12 BZT55C39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12 BZT55C43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12 BZT55C47 44 47 50 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12 BZT55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12 BZT55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12 BZT55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12 BZT55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12 BZT55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12 Notes Additional measurement of voltage group 9V1 to 75 at 95 % V 35 nA at T 25 C zmin. j (1) t 10 ms, T/t > 1000 p p Rev. 1.7, 22-Nov-11 Document Number: 85637 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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