CNY117F www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection, 110 C Rated FEATURES Operating temperature from -55 C to +110 C No base terminal connection for improved 1 6 A NC common mode interface immunity Long term stability C 2 5 C Industry standard dual-in-line package 4 NC 3 E Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS AC adapter SMPS i179004-14 PLC DESCRIPTION Factory automation The CNY117F is a 110 C rated optocoupler consisting of a Game consoles gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in AGENCY APPROVALS DIP-6 package. UL file no. E52744 The coupling device is suitable for signal transmission cUL tested to CSA 22.2 bulletin 5A between two electrically separated circuits. The potential DIN EN 60747-5-5 (VDE 0884-5), available with option 1 difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. BSI: EN 60065, EN 60950-1 In contrast to the CNY117 series, the base terminal of the F FIMKO EN60950 type is not connected, resulting in a substantially improved CQC GB8898-2011 common-mode interference immunity. ORDERING INFORMATION DIP-6 Option 6 CN Y 1 1 7 F - X 0 T 7.62 mm 10.16 mm PART NUMBER CTR PACKAGE OPTION TAPE BIN AND Option 7 REEL > 8 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, BSI 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6 CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 DIP-6, 400 mil, option 6 CNY117F-1X006 CNY117F-2X006 CNY117F-3X006 CNY117F-4X006 SMD-6, option 7 CNY117F-1X007T CNY117F-2X007T CNY117F-3X007T CNY117F-4X007T VDE, UL, cUL, BSI 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6 CNY117F-1X001 CNY117F-2X001 CNY117F-3X001 CNY117F-4X001 DIP-6, 400 mil, option 6 CNY117F-1X016 CNY117F-2X016 CNY117F-3X016 CNY117F-4X016 SMD-6, option 7 CNY117F-1X017T CNY117F-2X017T CNY117F-3X017T CNY117F-4X017T Note Additional options may be possible, please contact sales office. Rev. 1.8, 08-Jan-14 Document Number: 83598 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 CNY117F www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6.0 V R DC forward current I 60 mA F Surge forward current t 10 s I 2.5 A FSM Power dissipation P 100 mW diss OUTPUT Collector emitter breakdown voltage BV 70 V CEO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Output power dissipation P 150 mW diss COUPLER Isolation test voltage between emitter and detector t = 1 min V 5000 V ISO RMS Storage temperature range T -55 to +150 C stg Ambient temperature range T -55 to +110 C amb (1) Soldering temperature 2 mm from case, 10 s T 260 C sld Total power dissipation P 250 mW diss Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 T - Ambient Temperature (C) amb Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V 1.39 1.65 V F F Breakdown voltage I = 10 A V 6.0 V R BR Reverse current V = 6.0 V I 0.01 10 A R R Capacitance V = 0 V, f = 1.0 MHz C 25 pF R O OUTPUT Collector emitter capacitance V = 5.0 V, f = 1.0 MHz C 5.2 pF CE CE Base collector capacitance V = 5.0 V, f = 1.0 MHz C 6.5 pF CE BC Emitter base capacitance V = 5.0 V, f = 1.0 MHz C 7.5 pF CE EB Rev. 1.8, 08-Jan-14 Document Number: 83598 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot