CNY17F www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES Isolation test voltage, 5000 V RMS No base terminal connection for improved 1 6 A NC common mode interface immunity Long term stability C 2 5 C Industry standard dual-in-line package 4 NC 3 E Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 AGENCY APPROVALS Safety application model number covering all products in this datasheet is CNY17F. This model number should be i179004-14 used when consulting safety agency documents. UL file no. E52744 DESCRIPTION cUL tested to CSA 22.2 bulletin 5A The CNY17F is an optocoupler consisting of a gallium DIN EN 60747-5-5 (VDE 0884-5), available with option 1 arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in BSI: EN 60065, EN 60950-1 DIP-6 package. FIMKO EN60950 The coupling device is suitable for signal transmission CQC GB8898-2011 between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY17 series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference immunity. ORDERING INFORMATION DIP-6 Option 6 C N Y1 7 F - X0 T 7.62 mm 10.16 mm PART NUMBER CTR PACKAGE OPTION TAPE BIN AND Option 7 Option 9 REEL > 8 mm 8 mm typ. AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 DIP-6, 400 mil, option 6 CNY17F-1X006 CNY17F-2X006 CNY17F-3X006 CNY17F-4X006 (1) (1) (1) (1) SMD-6, option 7 CNY17F-1X007 CNY17F-2X007T CNY17F-3X007T CNY17F-4X007T (1) (1) (1) (1) SMD-6, option 9 CNY17F-1X009T CNY17F-2X009T CNY17F-3X009T CNY17F-4X009T VDE, UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6 CNY17F-1X001 CNY17F-2X001 CNY17F-3X001 CNY17F-4X001 DIP-6, 400 mil, option 6 CNY17F-1X016 CNY17F-2X016 CNY17F-3X016 CNY17F-4X016 (1) (1) (1) (1) SMD-6, option 7 CNY17F-1X017 CNY17F-2X017 CNY17F-3X017 CNY17F-4X017 (1) (1) SMD-6, option 9 CNY17F-1X019 CNY17F-2X019 CNY17F-3X019 - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes do not put T on end. Rev. 2.2, 08-Jan-14 Document Number: 83607 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 CNY17F www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R DC forward current I 60 mA F Surge forward current t 10 s I 2.5 A FSM Power dissipation P 100 mW diss OUTPUT Collector emitter breakdown voltage BV 70 V CEO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Output power dissipation P 150 mW diss COUPLER Isolation test voltage between emitter and t = 1 min V 5000 V ISO RMS detector Storage temperature range T -55 to +150 C stg Ambient temperature range T -55 to +110 C amb Junction temperature T 100 C j (1) Soldering temperature 2 mm from case, 10 s T 260 C sld Total power dissipation P 250 mW diss Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through hole parts (DIP). 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 T - Ambient Temperature (C) amb Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V 1.39 1.65 V F F Breakdown voltage I = 10 A V6V R BR Reverse current V = 6 V I 0.01 10 A R R Capacitance V = 0 V, f = 1 MHz C 25 pF R O OUTPUT Collector emitter capacitance V = 5 V, f = 1 MHz C 5.2 pF CE CE Base collector capacitance V = 5 V, f = 1 MHz C 6.5 pF CE BC Emitter base capacitance V = 5 V, f = 1 MHz C 7.5 pF CE EB Rev. 2.2, 08-Jan-14 Document Number: 83607 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Total Power Dissipation (mW) tot