X-On Electronics has gained recognition as a prominent supplier of CNY65EXI Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. CNY65EXI Transistor Output Optocouplers are a product manufactured by Vishay. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

CNY65EXI Vishay

CNY65EXI electronic component of Vishay
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See Product Specifications
Part No.CNY65EXI
Manufacturer: Vishay
Category: Transistor Output Optocouplers
Description: Transistor Output Optocouplers Phototransistor Out Single CTR 50-300%
Datasheet: CNY65EXI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.578 ea
Line Total: USD 6.58

Availability - 1767
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
495
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 3.7193

1521
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 8.1991
10 : USD 6.5637
25 : USD 4.8438
50 : USD 4.7229
100 : USD 4.342
500 : USD 3.6478

8847
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 6.3595
10 : USD 5.4395
25 : USD 4.1745
100 : USD 3.795
250 : USD 3.6455
500 : USD 3.381
1050 : USD 3.3465
2100 : USD 3.2775
5250 : USD 3.2545

1767
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 6.578
3 : USD 6.045
5 : USD 3.406
14 : USD 3.224

495
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 2
Multiples : 1
2 : USD 3.9325

1521
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3
Multiples : 1
3 : USD 8.1991
10 : USD 6.5637
25 : USD 4.8568
50 : USD 4.7606
100 : USD 4.3745
500 : USD 3.6738

9
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 6
Multiples : 1
6 : USD 7.1337
10 : USD 6.0287

1789
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3
Multiples : 1
3 : USD 5.626

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Mounting Style
Description/Function
Height
Length
Width
Brand
Collector-Emitter Breakdown Voltage
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CNY65EXI from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CNY65EXI and other electronic components in the Transistor Output Optocouplers category and beyond.

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CNY65Exi www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, ATEX Certified FEATURES Top view ATEX certificate: PTB 03 ATEX 2033 U A () C www.vishay.com/doc 85361 Suitable for intrinsic safe circuits for gas and dust Gas safety provision: II (1) G Ex ia IIC Dust safety provision: II (1) D Ex ia IIIC 16965-1 C () E Conforms to EN 60079-0: 2012 + A11: 2013 Qualified for continuously, longterm, or frequently dangerous explosive environments, zone 0 DESCRIPTION Isolation voltage (V ) of 11 600 V for 1 minute ISO peak Distance from emitter to detector through insulation The CNY65Exi consists of a phototransistor optically 3 mm coupled to an infrared-emitting diode in a 4 pin plastic package. The components are mounted opposite one CTR from 50 % to 300 % another, with a distance between input and output of Very low coupling capacity (C ) K > 3.0 mm meeting the highest of safety requirements. - 0.3 pF superior noise immunity between input and The CNY65Exi is ATEX certificated for explosive output pins atmospheres according to the Directive 2014/34/EU Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 AGENCY APPROVALS ATEX :PTB 03 ATEX 2033 U APPLICATIONS EN 60079-0 : 2012 + A11 : 2013 Electronics used in potentially explosive gas and dust EN 60079-11 : 2012 environments EN 60079-26 : 2015 - Safety related process automation and instrumentation - Natural gas metering and flow measurement - Power and motor switching - Power supplies, metering, and data acquisition - Lighting and signaling - Petrol and grain transport and storage ORDERING INFORMATION DIP-4 CN Y 6 5 X E x i PART NUMBER CTR PACKAGE OPTION 15.24 mm BIN AGENCY CERTIFIED/PACKAGE CTR (%) ATEX 50 to 300 100 to 200 DIP-4, HV, high isolation distance CNY65Exi CNY65BExi Rev. 2.7, 07-Sep-2018 Document Number: 83541 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000CNY65Exi www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 5V R Forward current I 75 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 120 mW diss Junction temperature T 100 C j OUTPUT Collector emitter voltage V 32 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 130 mW diss Junction temperature T 100 C j COUPLER Total power dissipation P 250 mW tot Ambient temperature range T -55 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature 2 mm from case, t 10 s T 260 C sld Note Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V - 1.25 1.6 V F F OUTPUT Collector emitter voltage I = 1 mA V 32 - - V C CEO Emitter collector voltage I = 100 A V 7- - V E ECO Collector dark current V = 20 V, I = 0, E = 0 I - - 200 nA CE f CEO COUPLER V = 1 kV, IO (1) 12 Isolation resistance R -10 - IO 40 % relative humidity Collector saturation voltage I = 10 mA, I = 1 mA V -- 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 110 - - kHz c R = 100 L Coupling capacitance f = 1 MHz C -0.3 - pF k Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements (1) Related to standard climate 23/50 DIN 50014 CURRENT TRANSFER RATIO (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT CNY65Exi CTR 50 100 300 % I /I V = 5 V, I = 10 mA C F CE F CNY65BExi CTR 100 - 200 % Rev. 2.7, 07-Sep-2018 Document Number: 83541 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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