333 3 EGF1T www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Ultrafast Rectifier FEATURES Superectifier structure for high reliability condition Superectier Cavity-free glass-passivated junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency Avalanche surge energy capability Meets environmental standard MIL-S-19500 GF1 (DO-214BA) Meets MSL level 1, per J-STD-020, LF maximum peak of 250 C Cathode Anode AEC-Q101 qualified Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3D Models For use in high voltage rectification of photoflash application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 1.0 A F(AV) Case: GF1 (DO-214BA), molded plastic over glass body V 1300 V RRM Molding compound meets UL 94 V-0 flammability rating I 20 A FSM Base P/N-E3 - RoHS-compliant, commercial grade t 75 ns rr Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified E 15 mJ (X denotes revision code e.g. A, B) AS V at I = 1.0 A 3.0 V F F Terminals: matte tin plated leads, solderable per T max. 150 C J-STD-002 and JESD 22-B102 J E3 and HE3 suffix meet JESD 201 class 2 whisker test Package GF1 (DO-214BA) Circuit configuration Single Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL EGF1T UNIT Device marking code ET Maximum repetitive peak reverse voltage V 1300 V RRM Maximum RMS voltage V 910 V RMS Maximum DC blocking V 1300 V DC Maximum average forward rectified current I 1.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 20 A FSM superimposed on rated load Non-repetitive avalanche energy at T = 25 C, I = 1 A, L = 30 mH E 15 mJ A AS AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 12-Nov-2020 Document Number: 88904 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D EGF1T www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL EGF1T UNIT (1) Maximum instantaneous forward voltage 1.0 A T = 25 C V 3.0 V J F T = 25 C 5.0 J (2) Maximum DC reverse current V I A RM R T = 125 C 50 J I = 0.5 A, I =1.0 A, F R Typical reverse recovery time t 75 ns rr I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 8.0 pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL EGF1T UNIT (1) R 50 JA Typical thermal resistance C/W (1) R 20 JL Note (1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.95 x 0.95 (24 mm x 24 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EGF1T-E3/67A 0.104 67A 1500 7 diameter plastic tape and reel EGF1T-E3/5CA 0.104 5CA 6500 13 diameter plastic tape and reel (1) EGF1THE3 A/H 0.104 H 1500 7 diameter plastic tape and reel (1) EGF1THE3 A/I 0.104 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.5 25 20 1.0 15 10 0.5 5 0 0 25 50 75 100 125 150 175 110 100 Number of Cycles T - Lead Temperature (C) L Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Forward Surge Current Revision: 12-Nov-2020 Document Number: 88904 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Forward Surge Current (A)