G2SB60-E345 Vishay

333 3 G2SB20, G2SB60, G2SB80 www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES UL recognition file number E54214 Ideal for printed circuit boards High surge current capability Typical I less than 0.1 A R ~ High case dielectric strength ~ ~ ~ Solder dip 275 C max. 10 s, per JESD 22-B106 Case Type GBL Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, SMPS, adapter, audio equipment, 3D Models and home appliances application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: GBL I 1.5 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 200 V, 600 V, 800 V RRM Base P/N-E3 - RoHS-compliant, commercial grade I 80 A FSM Terminals: matte tin plated leads, solderable per I 5 A R J-STD-002 and JESD 22-B102 V at I = 0.75 V 1.0 V F F E3 suffix meets JESD 201 class 1A whisker test T max. 150 C J Polarity: as marked on body Package GBL Circuit configuration In-line MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL G2SB20 G2SB60 G2SB80 UNIT Maximum repetitive peak reverse voltage V 200 600 800 V RRM Maximum RMS voltage V 140 420 560 V RMS Maximum DC blocking voltage V 200 600 800 V DC Maximum average forward rectified output current at T = A I 1.5 A F(AV) 25 C Peak forward surge current single sine-wave I 80 A FSM superimposed on rated load 2 2 Rating for fusing (t < 8.3 ms) It27 A s Operating junction and storage temperature range T , T -55 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOL G2SB20 G2SB60 G2SB80 UNIT Maximum instantaneous forward 0.75 A V 1.00 V F voltage drop per diode T = 25 C 5.0 Maximum DC reverse current at A I A R rated DC blocking voltage per diode T = 125 C 300 A Revision: 07-Aug-2020 Document Number: 88603 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D G2SB20, G2SB60, G2SB80 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL G2SB20G2SB60G2SB80UNIT R 40 JA Typical thermal resistance C/W R 12 JC Note Unit mounted on PCB with 0.5 x 0.5 (12 mm x 12 mm) copper pads and 0.375 (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE G2SB60-E3/45 2.045 45 20 Tube G2SB60-E3/51 2.045 51 400 Anti-static PVC tray RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 2.0 100 PCB Mounting, T A 1.5 10 1.0 1 0.5 0.1 0 0.01 0 25 50 75 100 125 150 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode 100 100 T = 125 C A 80 10 60 1 40 0.1 20 T = 25 C A 1.0 Cycle 0 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Per Diode Per Diode Revision: 07-Aug-2020 Document Number: 88603 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Output (I ) F(AV) Instantaneous Reverse Current (A) Instantaneous Forward Current (A)