GDZ33B-E3-08 Vishay

GDZ-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES Silicon planar Zener diodes Low Zener impedance and low leakage current Popular in Asian designs Compact surface mount device Ideal for automated mounting AEC-Q101 qualified available ESD capability according to AEC-Q101: human body model > 8 kV machine model > 800 V PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade PARAMETER VALUE UNIT Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified V range nom. 2.0 to 36 V Z Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Test current I 5mA ZT V specification Pulse current Z Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY GDZ2V0B-E3-08 to GDZ36B-E3-08 3000 (8 mm tape on 7 reel) 15 000/box GDZ2V0B-HE3-08 to GDZ36B-HE3-08 GDZ-series GDZ2V0B-E3-18 to GDZ36B-E3-18 10 000 (8 mm tape on 13 reel) 10 000/box GDZ2V0B-HE3-18 to GDZ36B-HE3-18 PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 SOD-323 4.3 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation P 200 mW tot T Junction temperature 150 C j Storage temperature range T -55 to +150 C stg T Operating temperature range -55 to +150 C op Rev. 2.1, 14-Oct-16 Document Number: 85766 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000GDZ-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb ZENER VOLTAGE REVERSE TEST CURRENT DYNAMIC RESISTANCE RANGE CURRENT MARKING V at I I I I at V Z at I Z at I PART NUMBER Z ZT1 ZT1 ZT2 R R Z ZT1 ZK ZT2 CODE V mA A V MIN. MAX. MAX. MAX. MAX. GDZ2V0B 02 2.02 2.2 5 0.5 120 0.5 100 1000 GDZ2V2B 12 2.22 2.41 5 0.5 120 0.7 100 1000 GDZ2V4B 22 2.43 2.63 5 0.5 120 1 100 1000 GDZ2V7B 32 2.69 2.91 5 0.5 100 1 110 1000 GDZ3V0B 42 3.01 3.22 5 0.5 50 1 120 1000 GDZ3V3B 52 3.32 3.53 5 0.5 20 1 120 1000 GDZ3V6B 62 3.6 3.845 5 1 10 1 100 1000 GDZ3V9B 72 3.89 4.16 5 1 5 1 100 1000 GDZ4V3B 82 4.17 4.43 5 1 5 1 100 1000 GDZ4V7B 92 4.55 4.75 5 0.5 2 1 100 800 GDZ5V1B T1 4.98 5.2 5 0.5 2 1 80 500 GDZ5V6B T2 5.49 5.73 5 0.5 1 2.5 60 200 GDZ6V2B T3 6.06 6.33 5 0.5 1 3 60 100 GDZ6V8B T4 6.65 6.93 5 0.5 0.5 3.5 40 60 GDZ7V5B T5 7.28 7.6 5 0.5 0.5 4 30 60 GDZ8V2B T6 8.02 8.36 5 0.5 0.5 5 30 60 GDZ9V1B T7 8.85 9.23 5 0.5 0.5 6 30 60 GDZ10B T8 9.77 10.21 5 0.5 0.1 7 30 60 GDZ11B T9 10.76 11.22 5 0.5 0.1 8 30 60 GDZ12B TA 11.74 12.24 5 0.5 0.1 9 30 80 GDZ13B TB 12.91 13.49 5 0.5 0.1 10 37 80 GDZ15B TC 14.34 14.98 5 0.5 0.1 11 42 80 GDZ16B TD 15.85 16.51 5 0.5 0.1 12 50 80 GDZ18B TE 17.56 18.35 5 0.5 0.1 13 65 80 GDZ20B TH 19.52 20.39 5 0.5 0.1 15 85 100 GDZ22B TK 21.54 22.47 5 0.5 0.1 17 100 100 GDZ24B TL 23.72 24.78 5 0.5 0.1 19 120 120 GDZ27B TM 26.19 27.53 5 0.5 0.1 21 150 150 GDZ30B TN 29.19 30.69 5 0.5 0.1 23 200 200 GDZ33B TP 32.15 33.79 5 0.5 0.1 25 250 250 GDZ36B TT 35.07 36.87 5 0.5 0.1 27 300 300 Notes The Zener voltage V is measured 40 ms after power is supplied Z The operating resistance (Z , Z ) are measured by superimposing a 1 kHz alternating current on the regulated current (I ). Z ZK Z Rev. 2.1, 14-Oct-16 Document Number: 85766 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000