33 3 GIB2401, GIB2402, GIB2403, GIB2404 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES 2 D PAK (TO-263AB) Power pack Glass passivated chip junction K Ultrafast recovery time Low switching losses, high efficiency 2 High forward surge capability 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PIN 1 K AEC-Q101 qualified available PIN 2 HEATSINK - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS AVAILABLE please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3D Models For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 16 A F(AV) 2 Case: D PAK (TO-263AB) V 50 V, 100 V, 150 V, 200 V RRM I 125 A Molding compound meets UL 94V-0 flammability rating FSM Base P/N-E3 - RoHS-compliant, commercial grad e t 35 ns rr Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified V 0.895 V F ( X denotes revision code e.g. A, B,....) T max. 150 C J Terminals: matte tin plated leads, solderable per 2 Package D PAK (TO-263AB) J-STD-002 and JESD22-B102 Circuit configurations Common cathode E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL GIB2401 GIB2402 GIB2403 GIB2404 UNIT Max. repetitive peak reverse voltage V 50 100 150 200 V RRM Max. RMS voltage V 35 70 105 140 V RMS Max. DC blocking voltage V 50 100 150 200 V DC Max. average forward rectified current at T = 125 C I 16 A C F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on I 125 A FSM rated load per diode Operating junction and storage temperature range T , T -65 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL GIB2401 GIB2402 GIB2403 GIB2404 UNIT I = 4 A T = 25 C 0.900 F J I = 8 A T = 25 C 0.975 Max. instantaneous forward voltage F J V V F per diode I = 4 A T = 100 C 0.800 F J I = 8 A T = 100 C 0.895 F J T = 25 C 50 5.0 Max. DC reverse current per diode at C I A R rated DC blocking voltage T = 100 C 150 500 C Max. reverse recovery time I = 0.5 A, I = 1.0 A,I = 0.25 A t 35 ns F R rr rr Typical junction capacitance per diode 4 V, 1 MHz C 85 pF J Revision: 24-Jun-2019 Document Number: 88633 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D GIB2401, GIB2402, GIB2403, GIB2404 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL GIB2401 GIB2402 GIB2403 GIB2404 UNIT (1) Typical thermal resistance per diode R 1.2 C/W JC Note (1) Thermal resistance from junction to case per leg mounted on heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB GIB2401-E3/45 1.35 45 50/tube Tube TO-263AB GIB2401-E3/81 1.35 81 900/reel Tape and reel (1) TO-263AB GIB2401HE3 A/P 1.35 P 50/tube Tube (1) TO-263AB GIB2401HE3 A/I 1.35 I 900/reel Tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 20 100 Resistive or Inductive Load T = 25 C T = 125 C J J 16 10 Infinite Heatsink, T C Pulse Width = 300 s 12 1 % Duty Cycle 1 8 Ambient Air Rating, T A 0.1 4 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Max. Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 150 100 T = 125 C C 8.3 ms Single Half Sine-Wave 125 T = 125 C J 10 100 T = 100 C J 75 1 50 0.1 25 T = 25 C J 0 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Per Diode Revision: 24-Jun-2019 Document Number: 88633 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Rectified Current (A) Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A)