VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 25 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I and Q
RRM rr
Designed and qualified according to
JEDEC -JESD47
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220AC
Available
BENEFITS
Base
Reduced RFI and EMI
cathode
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
3
1 DESCRIPTION
Cathode Anode
VS-HFA25TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
PRODUCT SUMMARY VS-HFA25TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
Package TO-220AC
ultrafast recovery time, the HEXFRED product line features
I 25 A
F(AV)
extremely low values of peak recovery current (I ) and
RRM
does not exhibit any tendency to snap-off during the
V 600 V
R
t portion of recovery. The HEXFRED features combine to
b
V at I 1.3 V
F F
offer designers a rectifier with lower noise and significantly
t typ. 23 ns lower switching losses in both the diode and the switching
rr
transistor. These HEXFRED advantages can help to
T max. 150 C
J
significantly reduce snubbing, component count and
Diode variation Single die
heatsink sizes. The HEXFRED VS-HFA25TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Cathode to anode voltage V 600 V
R
Maximum continuous forward current I T = 100 C 25
F C
Single pulse forward current I 225 A
FSM
Maximum repetitive forward current I 100
FRM
T = 25 C 125
C
Maximum power dissipation P W
D
T = 100 C 50
C
Operating junction and storage temperature range T , T -55 to +150 C
J Stg
Revision: 14-Jul-15 Document Number: 94065
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
V I = 100 A 600 - -
BR R
breakdown voltage
I = 25 A -1.3 1.7
F
V
Maximum forward voltage V I = 50 A See fig. 1 - 1.5 2.0
FM F
I = 25 A, T = 125 C - 1.3 1.7
F J
V = V rated -1.5 20
R R
Maximum reverse
I See fig. 2 A
RM
leakage current
T = 125 C, V = 0.8 x V rated - 600 2000
J R R
Junction capacitance C V = 200 V See fig. 3 - 55 100 pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 23 -
rr F F R
Reverse recovery time
t T = 25 C -50 75 ns
rr1 J
See fig. 5, 6 and 16
t T = 125 C - 105 160
rr2 J
I T = 25 C - 4.5 10
RRM1 J
Peak recovery current
A
See fig. 7 and 8 I = 25 A
I T = 125 C - 8.0 15
F
RRM2 J
dI /dt = 200 A/s
F
Q T = 25 C - 112 375
Reverse recovery charge rr1 J
nC
V = 200 V
R
See fig. 9 and 10
Q T = 125 C - 420 1200
rr2 J
Peak rate of fall of recovery
dI /dt1 T = 25 C - 250 -
(rec)M J
current during t A/s
b
dI /dt2 T = 125 C - 160 -
See fig. 11 and 12 (rec)M J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C
lead
Thermal resistance,
R --1.0
thJC
junction to case
Thermal resistance,
R Typical socket mount - - 80 K/W
thJA
junction to ambient
Thermal resistance,
R Mounting surface, flat, smooth and greased - 0.5 -
thCS
case to heatsink
-2.0 - g
Weight
-0.07 - oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
Marking device Case style TO-220AC HFA25TB60
Revision: 14-Jul-15 Document Number: 94065
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000