IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 C Rated FEATURES Operating temperature from - 55 C to + 110 C A 1 8 NC 2 High BV , 70 V K 7 B CEO 3 6 C NC Isolation test voltage, 4000 V RMS E NC 4 5 Industry standard SOIC-8 surface mountable package i179002 Compatible with dual wave, vapor phase and IR reflow soldering Lead (Pb)-free component DESCRIPTION Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC The 110 C IL1205AT/1206AT/1207AT/1208AT are optically coupled pairs with a gallium arsenide infrared LED and a APPLICATIONS silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining AC adapters a high degree of electrical isolation between input and PLCs output. This family comes in a standard SOIC-8 small outline Switch mode power supplies package for surface mounting which makes them ideally DC/DC converters suited for high density application with limited space. In addition to eliminating through-hole requirements, this Microprocessor I/O interfaces package conforms to standards for surface mounted General impedance matching circuits devices. A specified minimum and maximum CTR allows a narrow AGENCY APPROVALS tolerance in the electrical design of the adjacent circuits. The UL1577 - file no. E52744 system code Y high BV of 70 V gives a higher safety margin compared CEO CUL - file no. E52744, equivalent to CSA bulletin 5A to the industry standard 30 V. DIN EN 60747-5-5 available with option 1 ORDER INFORMATION PART REMARKS IL1205AT CTR 40 to 80 %, SOIC-8 IL1206AT CTR 63 to 125 %, SOIC-8 IL1207AT CTR 100 to 200 %, SOIC-8 IL1208AT CTR 160 to 320 %, SOIC-8 (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Continuous forward current I 60 mA F Peak reverse voltage V 6.0 V R Power dissipation P 90 mW diss Derate linearly from 25 C 0.9 mW/C OUTPUT Collector emitter voltage V 70 V CE I 50 mA C Collector current t < 1.0 ms I 100 mA C Power dissipation P 150 mW diss Derate linearly from 25 C 1.5 mW/C Document Number: 83549 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.7, 08-May-08 301 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package, 110 C Rated (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Isolation test voltage V 4000 V ISO RMS Operating temperature T - 55 to + 110 C amb Total package dissipation (LED and detector) P 240 mW tot Storage temperature T - 55 to + 150 C stg max. 10 s, dip soldering distance (2) Soldering temperature T 260 C sld to seating plane 1.5 mm Derate linearly from 25 C 2.4 mW/C Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC). 100 160 150 90 140 80 130 120 70 110 60 100 90 50 80 70 40 60 30 50 40 20 30 10 20 10 0 0 010 20 30 4050 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80 90 100 110 120 T (C) amb T (C) amb Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature Fig. 2 - Output Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1.3 1.5 V F F Reverse current V = 6 V I 0.1 100 A R R Capacitance V = 0 V C 13 pF R I OUTPUT Collector emitter leakage current V = 10 V I 5.0 50 nA CE CEO Collector emitter breakdown voltage I = 100 A BV 70 V C CEO Emitter collector breakdown voltage I = 100 A BV 7.0 10 V E ECO Collector base breakdown current BV 70 V CBO Saturation voltage, collector emitter I = 2 mA, I = 10 mA V 0.4 V C F CEsat COUPLER IL1205AT CTR 40 80 % IL1206AT CTR 63 125 % I = 10 mA, V = 5.0 V F CE IL1207AT CTR 100 200 % IL1208AT CTR 100 320 % DC current transfer ratio IL1205AT CTR 13 25 % IL1206AT CTR 22 40 % I = 1.0 mA, V = 5.0 V F CE IL1207AT CTR 34 60 % IL1208AT CTR 56 95 % Capacitance (input to output) C 0.5 pF IO Note T = 25 C, unless otherwise specified. amb Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83549 302 Rev. 1.7, 08-May-08 LED Power P (mW) diss Output Power P (mW) diss