X-On Electronics has gained recognition as a prominent supplier of ILD211T Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. ILD211T Transistor Output Optocouplers are a product manufactured by Vishay. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

ILD211T Vishay

ILD211T electronic component of Vishay
ILD211T Vishay
ILD211T Transistor Output Optocouplers
ILD211T  Optoelectronics

Images are for reference only
See Product Specifications
Part No. ILD211T
Manufacturer: Vishay
Category: Transistor Output Optocouplers
Description: Transistor Output Optocouplers Phototransistor Out Dual CTR >20%
Datasheet: ILD211T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.177 ea
Line Total: USD 1.18 
Availability - 2509
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.6038
4000 : USD 0.5442

491
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 69
Multiples : 1
69 : USD 0.9381
84 : USD 0.7763
85 : USD 0.7684
100 : USD 0.6761
250 : USD 0.6604
500 : USD 0.6098

1940
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 1.1001
10 : USD 0.9077
30 : USD 0.8126
100 : USD 0.7172
500 : USD 0.6595
1000 : USD 0.6314

2509
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1.177
10 : USD 0.7942
100 : USD 0.6193
500 : USD 0.5335
1000 : USD 0.5137
2000 : USD 0.4829
4000 : USD 0.4785
10000 : USD 0.4697

1422
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 53
Multiples : 1
53 : USD 0.767
100 : USD 0.676
200 : USD 0.6517
500 : USD 0.6095
1000 : USD 0.5818

491
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 14
Multiples : 1
14 : USD 0.7763
25 : USD 0.7684
100 : USD 0.6761
250 : USD 0.6604
500 : USD 0.6098

1940
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.6038
4000 : USD 0.5442

   
Manufacturer
Product Category
RoHS - XON
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Output Type
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Number of Channels
If - Forward Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Mounting Style
Input Type
Output Device
Brand
Number Of Channels Per Chip
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the ILD211T from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ILD211T and other electronic components in the Transistor Output Optocouplers category and beyond.

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ILD205T, ILD206T, ILD207T, ILD211T, ILD213T www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package FEATURES A1 8C Two channel coupler C2 7E SOIC-8 surface mountable package A3 6C Standard lead spacing of 0.05 C4 5E Available only on tape and reel option i179018-2 (conforms to EIA standard 481-2) i179025 Isolation test voltage, 4000 V RMS Compatible with dual wave, vapor phase and IR reflow DESCRIPTION soldering The ILD205T, ILD206T, ILD207T, ILD211T, and ILD213T are Material categorization: for definitions of compliance optically coupled pairs with a gallium arsenide infrared LED please see www.vishay.com/doc 99912 and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while AGENCY APPROVALS maintaining a high degree of electrical isolation between input and output. The ILD205T, ILD206T, ILD207T, ILD211T, UL1577, file no. E52744 system code Y and ILD213T come in a standard SOIC-8 small outline cUL - file no. E52744, equivalent to CSA bulletin 5A package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BV of 70 V gives a higher safety margin compared CEO to the industry standard of 30 V. ORDERING INFORMATION SIOC-8 IL D 2 T PART NUMBER 6.1 mm CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA UL, cUL 40 to 80 63 to 125 100 to 200 20 100 SOIC-8 ILD205T ILD206T ILD207T ILD211T ILD213T Rev. 2.1, 23-Oct-15 Document Number: 83647 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 ILD205T, ILD206T, ILD207T, ILD211T, ILD213T www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage V 6V R Peak pulsed current 1 s, 300 pps 1 A Continuous forward current per channel I 30 mA F Power dissipation P 50 mW diss OUTPUT Collector emitter breakdown voltage BV 70 V CEO Emitter collector breakdown voltage BV 7V ECO Power dissipation per channel P 125 mW diss COUPLER Total package dissipation ambient P 350 mW tot (2 LEDs and 2 detectors, 2 channels) Storage temperature T -55 to +150 C stg Operating temperature T -55 to +100 C amb (1) Soldering time from 260 C T 10 s sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V -1.2 1.55 V F F Reverse current V = 6 V I - 0.1 100 A R R Capacitance V = 0 V C -25- pF R O OUTPUT Collector emitter breakdown voltage I = 10 A BV 70 - - V C CEO Emitter collector breakdown voltage I = 10 A BV 7- - V E ECO Collector emitter leakage current V = 10 V, I = 0 A I - 5 50 nA CE F CEO Collector emitter capacitance V = 0 V C -10- pF CE CE COUPLER Collector emitter saturation voltage I = 10 mA, I = 2.5 mA V -- 0.4 V F C CEsat Capacitance (input to output) C -0.5 - pF IO Note Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT ILD205T CTR 40 - 80 % DC ILD206T CTR 63 - 125 % DC V = 5 V, I = 10 mA ILD207T CTR 100 - 200 % CE F DC ILD211T CTR 20 - - % DC I /I C F ILD213T CTR 100 - - % DC ILD205T CTR 13 30 - % DC V = 5 V, I = 1 mA ILD206T CTR 22 45 - % CE F DC ILD207T CTR 34 70 - % DC Rev. 2.1, 23-Oct-15 Document Number: 83647 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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