ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) FEATURES Dual Channel Identical channel to channel footprint 1 16 C A/C ILD620 crosses to TLP620-2 A/C 2 15 E ILQ620 crosses to TLP620-4 A/C 1 8 C A/C 3 14 C High collector emitter voltage, BV = 70 V CEO A/C 2 7 E A/C 4 13 E Dual and quad packages feature: A/C A/C 5 12 C 3 6 C Quad Channel - Reduced board space A/C A/C 6 11 E 4 5 E - Lower pin and parts count C A/C 7 10 - Better channel to channel CTR match A/C E 8 9 - Improved common mode rejection V DE Isolation test voltage 5300 V RMS Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION AGENCY APPROVALS The ILD620, ILQ620, ILD620GB, and ILQ620GB are UL1577, file no. E52744 system code H, double protection multi-channel input phototransistor optocouplers that use cUL tested to CSA 22.2 bulletin 5A inverse parallel GaAs IRLED emitter and high gain NPN DIN EN 60747-5-5 (VDE 0884) silicon phototransistors per channel. These devices are FIMKO constructed using over/under leadframe optical coupling and double molded insulation resulting in a withstand test CQC GB4943.1-2011 and GB8898:2011 (suitable for voltage of 5300 V . installation altitude below 2000 m) RMS The LED parameters and the linear CTR characteristics make these devices well suited for AC voltage detection. The ILD620GB and ILQ620GB with its low I guaranteed F CTR minimizes power dissipation of the A voltage CEsat C detection network that is placed in series with the LEDs. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. ORDERING INFORMATION DIP I L x6 20x x - X 0 T PART NUMBER PACKAGE OPTION TAPE 7.62 mm AND Option 7 Option 9 x = D (Dual) or Q (Quad) REEL > 0.1 mm > 0.7 mm DUAL CHANNEL QUAD CHANNEL AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, FIMKO 50 to 600 100 to 600 50 to 600 100 to 600 DIP-8 ILD620 ILD620GB - - (1) SMD-8, option 7 ILD620-X007T --- (1) (1) SMD-8, option 9 ILD620-X009T ILD620GB-X009T -- DIP-16 - - ILQ620 ILQ620GB SMD-16, option 7 - - ILQ620-X007 - (1) (1) SMD-16, option 9 - - ILQ620-X009T ILQ620GB-X009T VDE, UL, cUL, FIMKO 50 to 600 100 to 600 50 to 600 100 to 600 DIP-16 - - ILQ620-X001 - (1) SMD-16, option 9 - - ILQ620-X019T - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. Rev. 1.8, 12-Apr-13 Document Number: 83653 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 ILD620, ILD620GB, ILQ620, ILQ620GB www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Forward current I 60 mA F Surge current I 1.5 A FSM Power dissipation P 100 mW diss Derate linearly from 25 C 1.3 mW/C OUTPUT Collector emitter breakdown voltage BV 70 V CEO I 50 mA C Collector current t < 1 s I 100 mA C Power dissipation P 150 mW diss Derate from 25 C 2mW/C COUPLER Isolation test voltage t = 1 s V 5300 V ISO RMS Isolation voltage V 890 V IORM P Total power dissipation P 250 mW tot ILD620 400 mW Package dissipation ILD620GB 400 mW Derate from 25 C 5.33 mW/C ILQ620 500 mW Package dissipation ILQ620GB 500 mW Derate from 25 C 6.67 mW/C Creepage distance 7mm Clearance distance 7mm 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 100 C j (1) Soldering temperature 2 mm from case bottom T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1 1.15 1.3 V F F Forward current V = 0.7 V I 2.5 20 A R F Capacitance V = 0 V, f = 1 MHz C 25 pF F O Thermal resistance, junction to lead R 750 K/W thJL OUTPUT Collector emitter capacitance V = 5 V, f = 1 MHz C 6.8 pF CE CE V = 24 V I 10 100 nA CE CEO Collector emitter leakage current T = 85 C, V = 24 V I 250 A A CE CEO Thermal resistance, junction to lead R 500 K/W thJL Rev. 1.8, 12-Apr-13 Document Number: 83653 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000