K827PH, K847PH Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES DC isolation test voltage 5000 V RMS Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS Programmable logic controllers Modems Answering machines 17203-6 General applications CE AGENCY APPROVALS UL1577, file no. E57244 system code H, double protection cUL tested to CSA 22.2 bulletin 5A, UL1577, file no. E52744 1 AC 8 pin 16 pin 17203-7 C DESCRIPTION In the K827PH, K847PH parts each channel consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 8 pin (dual) 16 pin (quad) plastic dual inline package. ORDER INFORMATION PART REMARKS K827PH CTR 50 % to 600 %, DIP-8 K847PH CTR 50 % to 600 %, DIP-16 Note K827PH and K847PH are marked as K827P and K847P respectively. (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A P FSM Power dissipation P 100 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 150 mW diss Junction temperature T 125 C j Document Number: 81135 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.0, 04-Mar-10 543 K827PH, K847PH Optocoupler, Phototransistor Output Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER AC isolation test voltage (RMS) t = 1 min V 5000 V ISO RMS Total power dissipation P 250 mW tot Operating ambient temperature range T - 40 to + 100 C amb Storage temperature range T - 55 to + 125 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. (1) ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 100 A V 70 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector dark current V = 20 V, I = 0, E = 0 I 100 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat I = 10 mA, V = 5 V, F CE Cut-off frequency f 100 kHz c R = 100 L Coupling capacitance f = 1 MHz C 0.3 pF k Note (1) Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT K827PH CTR 50 600 % I /I V = 5 V, I = 5 mA C F CE F K847PH CTR 50 600 % www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 81135 544 Rev. 1.0, 04-Mar-10