333 3 LL4148-M www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diodes Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 APPLICATIONS Extreme fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: 08/2.5K per 7 reel (8 mm tape), 12.5K/box 18/10K per 13 reel (8 mm tape), 10K/box PARTS TABLE CIRCUIT PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING REMARKS CONFIGURATION V = 100 V, RRM LL4148-M LL4148-M-08 or LL4148-M-18 - Single Tape and reel V = max. 1000 mV at I = 50 mA F F ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Reverse voltage V 75 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) (1) Power dissipation P 500 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 25-Feb-2020 Document Number: 81162 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D LL4148-M www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 0.860 1 V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p V = 0 V, f = 1 MHz, R Diode capacitance C 4pF D V = 50 mV HF I = I = 10 mA, F R 8 i = 1 mA R Reverse recovery time t ns rr I = 10 mA, V = 6 V, F R 4 i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 LL4148-M T = 25 C 100 j 100 Scattering Limit 10 Scattering Limit 10 1 T = 25 C j 1 0.1 2.0 1 100 10 0 0.4 0.8 1.2 1.6 94 9098 V - Reverse Voltage (V) V - Forward Voltage (V) R 94 9096-1 F Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Diode Capacitance vs. Reverse Voltage 3.0 f = 1 MHz 2.5 T = 25 C j 2.0 1.5 1.0 0.5 0 100 0.1 1 10 94 9099 V - Reverse Voltage (V) R Fig. 2 - Reverse Current vs. Reverse Voltage Rev. 1.3, 25-Feb-2020 Document Number: 81162 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 C - Diode Capacitance (pF) I - Forward Current (mA) D F I - Reverse Current (nA) R