333 3 MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Fast Recovery Surface-Mount Bridge Rectifier FEATURES UL recognition, file number E54214 ~ Saves space on printed circuit boards Ideal for automated placement ~ High surge current capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ~ TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification ~ for power supply, lighting ballaster, battery charger, home MBS (TO-269AA) appliances, office equipment, and telecommunication applications. LINKS TO ADDITIONAL RESOURCES MECHANICAL DATA Case: MBS (TO-269AA) 3D Models Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per PRIMARY CHARACTERISTICS J-STD-002 and JESD22-B102 I 0.5 A F(AV) E3 suffix meets JESD 201 class 1A whisker test V 200 V, 400 V, 600 V RRM Polarity: as marked on body I 35 A FSM I 5 A R V at I = 0.4 A 1.0 V F F T max. 150 C J Package MBS (TO-269AA) Circuit configuration Quad MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MB2S MB4S MB6S UNIT Device marking code 2 4 6 Maximum repetitive peak reverse voltage V 200 400 600 V RRM Maximum RMS voltage V 140 280 420 V RMS Maximum DC blocking voltage V 200 400 600 V DC (1) on glass-epoxy PCB 0.5 Maximum average forward output I A F(AV) (2) rectified current (fig. 1) on aluminum substrate 0.8 Peak forward surge current 8.3 ms single half sine-wave I 35 A FSM superimposed on rated load 2 2 t5.0 A s Rating for fusing (t < 8.3 ms) I Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) On glass epoxy PCB mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8 x 0.8 (20 mm x 20 mm) mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) solder pad Revision: 04-Aug-2020 Document Number: 88661 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MB2S, MB4S, MB6S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNIT Maximum instantaneous forward I = 0.4 A V 1.0 V F F voltage per diode T = 25 C 5.0 A Maximum DC reverse current at rated DC blocking I A R voltage per diode T = 125 C 100 A Typical junction capacitance per diode 4.0 V, 1 MHz C 13 pF J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MB2S MB4S MB6S UNIT (1) R 85 JA (2) Typical thermal resistance R 70 C/W JA (1) R 20 JL Notes (1) On glass epoxy PCB mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8 x 0.8 (20 mm x 20 mm) mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MB2S-E3/45 0.22 45 100 Tube MB2S-E3/80 0.22 80 3000 13 diameter paper tape and reel Revision: 04-Aug-2020 Document Number: 88661 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000