The MBB02070C1200FCT00 is a 200 V, TrenchFET® N-Channel MOSFET from Vishay, with a maximum drain source voltage of 200 V, a gate source voltage of ± 20 V, an Rds(on) of 3.5 mO, and a drain current of 80 A. It has a super-low gate charge and fast switching times, making it ideal for high-efficiency power management applications. It is also RoHS-compliant, halogen-free, and corrosive-gas free.