MMBD6050 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES Silicon epitaxial planar diode 3 Fast switching diode in case SOT-23, especially suited for automatic insertion AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial 12 grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS MMBD6050-E3-08 or MMBD6050-E3-18 MMBD6050 Single 5AM Tape and reel MMBD6050-HE3-08 or MMBD6050-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 70 V R Forward current I 200 mA F Peak forward surge current I 500 mA FSM P 225 mW tot (1) Maximum power dissipation on FR-5 board Derate above 25 C P 1.8 mW/C tot P 300 mW Maximum power dissipation on alumina tot (2) substrate Derate above 25 C P 2.4 mW/C tot Notes (1) FR-5 = 1.0 x 0.75 x 0.062 (2) Alumina = 0.4 x 0.3 x 0.024 99.5 % alumina THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance FR-5 R 556 C/W thJA Junction to ambient alumina R 417 C/W thJA Maximum junction temperature T 150 C j Storage temperature range T -55 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.8, 13-Feb-18 Document Number: 85735 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MMBD6050 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A V 70 V R (BR) I = 1 mA V 0.55 0.7 V F F Forward voltage I = 100 mA V 0.85 1.1 V F F Reverse leakage current V = 50 V I 100 nA R R Reverse recovery time I = I = 10 mA, i = 1 mA t 4ns F R R rr Diode capacitance V = 0 C 2.5 pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10000 100 T =25C j f=1kHz 1000 100 10 10 1 1 1 10 100 0.01 0.1 110 100 18861 I - Forward Current (mA) I - Forward Current (mA) F 18662 F Fig. 1 - Dynamic Forward Resistance vs. Forward Current Fig. 3 - Dynamic Forward Resistance vs. Forward Current 500 1.1 T =25 C j 400 f=1MHz 1.0 300 0.9 200 0.8 100 0.7 0 0 2468 10 0 20 40 60 80 100 120 140 160 180 200 18664 V - Reverse Voltage (V) R T - Ambient Temperature (C) 18889 amb Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.8, 13-Feb-18 Document Number: 85735 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Admissible Power Dissipation ( mW ) tot r - Dynamic Forward Resistance () f r - Dynamic Forward Resistance() C (V )/C (0 V) - Relative Capacitance (pF) f D R D