MMBD7000 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode, especially suited for automatic insertion AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade 12 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS MMBD7000-E3-08 or MMBD7000-E3-18 MMBD7000 Dual serial M5C Tape and reel MMBD7000-HE3-08 or MMBD7000-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 100 V R Forward current (continuous) I 200 mA F Non-repetitive peak forward current t = 1 s I 500 mA FSM P 225 mW tot Power dissipation on FR-5 board Derate above 25 C P 1.8 mW/K tot P 300 mW tot Total device dissipation on alumina substrate Derate above 25 C P 2.4 mW/K tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) R 417 K/W thJA Typical thermal resistance, junction to ambient air (2) R 556 K/W thJA Maximum junction temperature T 150 C j Storage temperature range T -55 to +150 C stg Operating temperature range T -55 to +150 C op Notes (1) Device on alumina substrate (2) On FR-5 board Rev. 1.7, 13-Feb-18 Document Number: 85736 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MMBD7000 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A V 100 V R (BR) V = 50 V I 1000 nA R R Leakage current V = 100 V I 3A R R V = 50 V, T = 125 C I 100 A R j R I = 1 mA V 0.55 0.70 V F F Forward voltage I = 10 mA V 0.67 0.82 V F F I = 100 mA V 0.75 1.10 V F F Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = I = 10 mA, i = 1 mA, F R R Reverse recovery time t 4ns rr R = 100 L PACKAGE DIMENSIONS in millimeters (inches): SOT-23 3.1 (0.122) 0.550 ref. (0.022 ref.) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 0.35 (0.014) 0.35 (0.014) 2.35 (0.093) 0.45 (0.018) 0.35 (0.014) Foot print recommendation: 0.7 (0.028) 1 (0.039) 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.7, 13-Feb-18 Document Number: 85736 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0 to 8 1.43 (0.056) 0.1 (0.004) max. 1.20 (0.047) 0.175 (0.007) 0.098 (0.004) 2 (0.079) 0.2 (0.008) 1.15 (0.045) 0.9 (0.035) 0.9 (0.035)