MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection FEATURES Isolation test voltage, 5300 V RMS 1 6 A B No base terminal connection for improved common mode interface immunity C 2 5 C Long term stability NC 3 4 E Industry standard dual in line package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and i179009 WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS UL1577, file no. E52744 system code H or J, double The MOC8101/2/3/4/5 family optocoupler consisting of a protection gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in CSA 93751 DIP-6 package. BSI IEC 60950 IEC 60065 The coupling device is suitable for signal transmission DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending between two electrically separated circuits. The potential available with option 1 difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. The base terminal of the MOC8101/2/3/4/5 is not connected, resulting in a substantially improved common mode interference immunity. ORDER INFORMATION PART REMARKS MOC8101 CTR 50 to 80 %, DIP-6 MOC8102 CTR 73 to 117 %, DIP-6 MOC8103 CTR 108 to 173 %, DIP-6 MOC8104 CTR 160 to 256 %, DIP-6 MOC8105 CTR 65 to 133 %, DIP-6 MOC8101-X006 CTR 50 to 80 %, DIP-6 400 mil (option 6) MOC8101-X007 CTR 50 to 80 %, SMD-6 (option 7) MOC8101-X009 CTR 50 to 80 %, SMD-6 (option 9) MOC8102-X006 CTR 73 to 117 %, DIP-6 400 mil (option 6) MOC8102-X007 CTR 73 to 117 %, SMD-6 (option 7) MOC8102-X009 CTR 73 to 117 %, SMD-6 (option 9) MOC8104-X006 CTR 160 to 256 %, DIP-6 400 mil (option 6) MOC8104-X009 CTR 160 to 256 %, SMD-6 (option 9) MOC8105-X006 CTR 65 to 133 %, DIP-6 400 mil (option 6) MOC8105-X009 CTR 65 to 133 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. Document Number: 83660 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.5, 11-Jan-08 1MOC8101/MOC8102/MOC8103/MOC8104/MOC8105 Optocoupler, Phototransistor Output, Vishay Semiconductors No Base Connection (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6.0 V R Forward continuous current I 60 mA F Surge forward current t 10 s I 2.5 A FSM Power dissipation P 100 mW diss Derate linearly from 25C 1.33 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter collector breakdown voltage BV 7.0 V ECO Collector current I 50 mA C Derate linearly from 25C 2.0 mW/C Power dissipation P 150 mW diss COUPLER Isolation test voltage V 5300 V ISO RMS Creepage distance 7.0 mm Clearance distance 7.0 mm Isolation thickness between 0.4 mm emitter and detector Comparative tracking index per CTI 175 DIN IEC 112/VDE 0303, part 1 12 Isolation resistance V = 500 V R 10 IO IO Derate linearly from 25 C 3.33 mW/C Total power dissipation P 250 mW tot Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb Junction temperature T 100 C j max. 10 s, dip soldering: (2) Soldering temperature distance to seating plane T 260 C sld 1.5 mm Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1.25 1.5 V F F Breakdown voltage I = 10 A V 6.0 V R BR Reverse current V = 6.0 V I 0.01 10 A R R Capacitance V = 0 V, f = 1.0 MHz C 25 pF R O Thermal resistance R 750 K/W thja OUTPUT Collector emitter capacitance V = 5.0 V, f = 1.0 MHz C 5.2 pF CE CE V = 10 V, T = 25 C MOC8101 I 1.0 50 nA CE amp CEO1 Collector emitter dark current V = 10 V, T = 100 C MOC8102 I 1.0 A CE amp CEO1 Collector emitter breakdown voltage I = 1.0 mA BV 30 V C CEO Emitter collector breakdown voltage I = 100 ABV 7.0 V E ECO Thermal resistance R 500 K/W thja www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83660 2 Rev. 1.5, 11-Jan-08