P4KE6.8A thru P4KE540A
www.vishay.com
Vishay General Semiconductor
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in uni-directional and bi-directional
400 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
DO-204AL (DO-41)
Low incremental surge resistance
Solder dip 275 C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
V 5.8 V to 459 V
WM
Use in sensitive electronics protection against voltage
V uni-directional 6.8 V to 540 V
BR
transients induced by inductive load switching and lighting
V bi-directional 6.8 V to 440 V
BR on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
P 400 W
PPM
P 1.5 W
D
MECHANICAL DATA
I (uni-directional only) 40 A
FSM
Case: DO-204AL, molded epoxy body over passivated chip
T max. 175 C
J
Molding compound meets UL 94 V-0 flammability rating
Polarity Uni-directional, bi-directional
Base P/N-E3 - RoHS-compliant, commercial grade
Package DO-204AL (DO-41) Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
DEVICES FOR BI-DIRECTION APPLICATIONS
Note
For bi-directional types, use CA suffix (e.g. P4KE440CA).
P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for
Electrical characteristics apply in both directions.
commercial grade only
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL LIMIT UNIT
(1)
(fig.1) P 400 W
Peak pulse power dissipation with a 10/1000 s waveform
PPM
(1)
Peak pulse current with a 10/1000 s waveform I See next table A
PPM
Power dissipation on infinite heatsink at T = 75 C (fig. 5) P 1.5 W
L D
(2)
Peak forward surge current 8.3 ms single half-sine wave uni-directional only I 40 A
FSM
(3)
Maximum instantaneous forward voltage at 25 A for uni-directional only V 3.5/5.0 V
F
Operating junction and storage temperature range T , T - 55 to + 175 C
J STG
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2
A
(2)
8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for P4KE220A and below; V = 5.0 V for P4KE250A and above
F F
Revision: 18-Sep-12 Document Number: 88365
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000P4KE6.8A thru P4KE540A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
BREAKDOWN MAXIMUM MAXIMUM
MAXIMUM MAXIMUM
VOLTAGE TEST STAND-OFF REVERSE PEAK
CLAMPING TEMPERATURE
(1)
DEVICE V AT I CURRENT VOLTAGE LEAKAGE PULSE
BR T
VOLTAGE COEFFICENT
TYPE (V) I V AT V CURRENT
T WM WM
AT I AT V
PPM BR
(3) (2)
(mA) (V) I I
D PPM
V (V) (%/C)
MIN. MAX. C
(A) (A)
P4KE6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.057
P4KE7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.061
P4KE8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.060
P4KE9.1A 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068
P4KE10A 9.5 10.5 1.0 8.55 10 27.6 14.5 0.073
P4KE11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075
P4KE12A 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078
P4KE13A 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081
P4KE15A 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084
P4KE16A 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086
P4KE18A 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088
P4KE20A 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090
P4KE22A 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092
P4KE24A 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094
P4KE27A 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096
P4KE30A 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097
P4KE33A 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098
P4KE36A 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099
P4KE39A 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100
P4KE43A 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101
P4KE47A 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101
P4KE51A 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102
P4KE56A 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103
P4KE62A 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104
P4KE68A 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104
P4KE75A 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105
P4KE82A 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105
P4KE91A 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106
P4KE100A 95.0 105 1.0 85.5 1.0 2.9 137 0.106
P4KE110A 105 116 1.0 94.0 1.0 2.6 152 0.107
P4KE120A 114 126 1.0 102 1.0 2.4 165 0.107
P4KE130A 124 137 1.0 111 1.0 2.2 179 0.107
P4KE150A 143 158 1.0 128 1.0 1.9 207 0.108
P4KE160A 152 168 1.0 136 1.0 1.8 219 0.108
P4KE170A 162 179 1.0 145 1.0 1.7 234 0.108
P4KE180A 171 189 1.0 154 1.0 1.6 246 0.108
P4KE200A 190 210 1.0 171 1.0 1.5 274 0.108
P4KE220A 209 231 1.0 185 1.0 1.2 328 0.108
P4KE250A 237 263 1.0 214 1.0 1.2 344 0.110
P4KE300A 285 315 1.0 256 1.0 1.00 414 0.110
P4KE350A 333 368 1.0 300 1.0 0.83 482 0.110
P4KE400A 380 420 1.0 342 1.0 0.73 548 0.110
P4KE440A 418 462 1.0 376 1.0 0.66 602 0.110
P4KE480A 456 504 1.0 408 1.0 0.61 658 0.110
P4KE510A 485 535 1.0 434 1.0 0.57 698 0.110
P4KE540A 513 567 1.0 459 1.0 0.54 740 0.110
Notes
(1)
Pulse test: t 50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
For bi-directional types with V of 10 V and less the I limit is doubled
WM D
(4)
All terms and symbols are consistent with ANSI/EEE CA62.35
Revision: 18-Sep-12 Document Number: 88365
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000