333 3 RMB2S, RMB4S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Fast Recovery Surface-Mount Bridge Rectifier FEATURES ~ UL recognition, file number E54214 Saves space on printed circuit boards ~ Ideal for automated placement Fast recovery, low switching loss High surge current capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C ~ Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ~ TYPICAL APPLICATIONS MBS (TO-269AA) General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballaster, battery charger, home appliances, office equipment, and telecommunication LINKS TO ADDITIONAL RESOURCES applications. MECHANICAL DATA 3D Models Case: MBS (TO-269AA) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grade I 0.5 A F(AV) Terminals: matte tin plated leads, solderable per V 200 V, 400 V RRM J-STD-002 and JESD22-B102 I 30 A FSM E3 suffix meets JESD 201 class 1A whisker test t 150 ns rr Polarity: as marked on body V at I = 0.4 A 1.25 V F F T max. 150 C J Package MBS (TO-269AA) Circuit configuration Quad MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL RMB2S RMB4S UNIT Device marking code 2R 4R Maximum repetitive peak reverse voltage V 200 400 V RRM Maximum RMS voltage V 140 280 V RMS Maximum DC blocking voltage V 200 400 V DC (1) on glass-epoxy PCB 0.5 Maximum average forward output I A F(AV) (2) rectified current at T = 30 C A on aluminum substrate 0.8 Peak forward surge current 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load 2 2 Rating for fusing (t < 8.3 ms) It5.0 A s Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) On glass epoxy PCB mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8 x 0.8 (20 mm x 20 mm) mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) solder pad Revision: 04-Aug-2020 Document Number: 88705 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D RMB2S, RMB4S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL RMB2S RMB4S UNIT Maximum instantaneous forward I = 0.4 A V 1.25 V F F voltage per diode T = 25 C 5.0 A Maximum DC reverse current at rated DC blocking I A R voltage per diode T = 125 C 100 A I = 0.5 A, I = 1.0 A, F R Maximum reverse recovery time per diode t 150 ns rr I = 0.25 A rr Typical junction capacitance per diode 4.0 V, 1 MHz C 13 pF J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL RMB2S RMB4S UNIT (1) R 85 JA (1) (2) Typical thermal resistance R 70 C/W JA (1) R 20 JL Notes (1) On glass epoxy PCB mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8 x 0.8 (20 mm x 20 mm) mounted on 0.05 x 0.05 (1.3 mm x 1.3 mm) solder pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RMB4S-E3/45 0.22 45 100 Tube RMB4S-E3/80 0.22 80 3000 13 diameter paper tape and reel Revision: 04-Aug-2020 Document Number: 88705 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000