S1GHE3_A/I Vishay

333 3 S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Rectifier FEATURES Available Low profile package Ideal for automated placement Glass passivated pellet chip junction Low forward voltage drop Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020, SMA (DO-214AC) LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, 3D Models automotive, and telecommunication. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMA (DO-214AC) I 1.0 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-E3 - RoHS-compliant, commercial grade 50 V, 100 V, 200 V, 400 V, 600 V, V RRM 800 V, 1000 V Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade I 40 A, 30 A FSM Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified E 5 mJ AS Base P/NHM3 X - halogen-free, RoHS-compliant and I 1.0 A, 5.0 A R AEC-Q101 qualified V 1.1 V F ( X denotes revision code e.g. A, B,.....) T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMA (DO-214AC) J-STD-002 and JESD 22-B102 Circuit configuration Single E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT Device marking code SA SB SD SG SJ SK SM Maximum recurrent peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current (fig. 1) I 1.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 40 30 A FSM superimposed on rated load Non-repetitive peak reverse avalanche energy E 5mJ AS at 25 C, I = 1 A, L = 10 mH AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 21-Feb-2020 Document Number: 88711 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT Maximum instantaneous 1.0 A V 1.1 V F forward voltage T = 25 C 1.0 5.0 A Maximum DC reverse current I A R at rated DC blocking voltage T = 125 C 50 A I = 0.5 A, I = 1.0 A, F R Typical reverse recovery time t 1.8 s rr I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 12 pF J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT R 75 85 JA (1) Typical thermal resistance C/W R 27 30 JL Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S1J-E3/61T 0.064 61T 1800 7 diameter plastic tape and reel S1J-E3/5AT 0.064 5AT 7500 13 diameter plastic tape and reel (1) S1JHE3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) S1JHE3 A/I 0.064 I 7500 13 diameter plastic tape and reel S1J-M3/61T 0.064 61T 1800 7 diameter plastic tape and reel S1J-M3/5AT 0.064 5AT 7500 13 diameter plastic tape and reel (1) S1JHM3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) S1JHM3 A/I 0.064 I 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.2 100 T = 110 C L Resistive or Inductive Load 8.3 ms Single Half Sine-Wave 1.0 S1A thru S1J S1A thru S1J 0.8 0.6 10 S1K, S1M S1K, S1M 0.4 0.2 0.2 x 0.2 (5.0 mm x 5.0 mm) Thick Copper Pad Areas 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 21-Feb-2020 Document Number: 88711 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)