X-On Electronics has gained recognition as a prominent supplier of SA8.0A-E3/4 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SA8.0A-E3/4 ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SA8.0A-E3/4 Vishay

SA8.0A-E3/4 electronic component of Vishay
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Part No.SA8.0A-E3/4
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors 500W 8.0V Unidirect
Datasheet: SA8.0A-E3/4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2113 ea
Line Total: USD 2.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 2.2113
10 : USD 2.0592
125 : USD 1.1934
750 : USD 0.5733
1500 : USD 0.5031

   
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We are delighted to provide the SA8.0A-E3/4 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SA8.0A-E3/4 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SA5.0A thru SA170CA www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability DO-204AC (DO-15) Very fast response time Low incremental surge resistance Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: For definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 5.0 V to 170 V WM TYPICAL APPLICATIONS V (uni-directional) 6.4 V to 209 V BR Use in sensitive electronics protection against voltage V (bi-directional) 6.4 V to 209 V BR transients induced by inductive load switching and lighting P 500 W PPM on ICs, MOSFET, signal lines of sensor units for consumer, P 3.0 W D computer, industrial, and telecommunication. I (uni-directional only) 70 A FSM T max. 175 C MECHANICAL DATA J Polarity Uni-directional, bi-directional Case: DO-204AC, molded epoxy over passivated chip Molding compound meets UL 94 V-0 flammability rating Package DO-204AC (DO-15) Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per DEVICES FOR BI-DIRECTION APPLICATIONS J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix For bi-directional types, use CA suffix (e.g. SA5.0CA, meets JESD 201 class 2 whisker test SA170CA). Electrical characteristics apply in both directions. Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 500 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM Power dissipation on infinite heatsink at T = 75 C (fig. 5) P 3.0 W L D Peak forward surge current 10 ms single half sine-wave uni-directional only I 70 A FSM (3) Maximum instantaneous forward voltage at 100 A for uni-directional only V 3.5 V F Operating junction and storage temperature range T , T - 55 to + 175 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 18-Sep-12 Document Number: 88378 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SA5.0A thru SA170CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF PEAK REVERSE CLAMPING TEMPERATURE (1) V AT I CURRENT VOLTAGE PULSE BR T DEVICE TYPE LEAKAGE VOLTAGE COEFFICENT (V) I V CURRENT T WM (3) AT V AT I AT V WM PPM BR (2) (mA) (V) I PPM I (A) V (V) (%/C) MIN. MAX. D C (A) (4) SA5.0A 6.40 7.07 10 5.0 600 54.3 9.2 5 SA6.0A 6.677.37 10 6.0 600 48.5 10.3 5 SA6.5A 7.227.98 10 6.5 400 44.7 11.2 5 SA7.0A 7.788.60 10 7.0 150 41.7 12.0 6 SA7.5A 8.339.21 1.0 7.5 50 38.8 12.9 7 SA8.0A 8.899.83 1.0 8.0 25 36.8 13.6 7 SA8.5A 9.4410.4 1.0 8.5 10 34.7 14.4 8 SA9.0A 10.011.1 1.0 9.0 5.0 32.5 15.4 9 SA10A 11.112.3 1.0 10 1.0 29.4 17.0 10 SA11A 12.213.5 1.0 11 1.0 27.5 18.2 11 SA12A 13.314.7 1.0 12 1.0 25.1 19.9 12 SA13A 14.415.9 1.0 13 1.0 23.3 21.5 13 SA14A 15.617.2 1.0 14 1.0 21.6 23.2 14 SA15A 16.718.5 1.0 15 1.0 20.5 24.4 16 SA16A 17.819.7 1.0 16 1.0 19.2 26.0 17 SA17A 18.920.9 1.0 17 1.0 18.1 27.6 19 SA18A 20.022.1 1.0 18 1.0 17.1 29.2 20 SA20A 22.224.5 1.0 20 1.0 15.4 32.4 23 SA22A 24.426.9 1.0 22 1.0 14.1 35.5 25 SA24A 26.729.5 1.0 24 1.0 12.9 38.9 28 SA26A 28.931.9 1.0 26 1.0 11.9 42.1 30 SA28A 31.134.4 1.0 28 1.0 11 45.4 31 SA30A 33.336.8 1.0 30 1.0 10 48.4 36 SA33A 36.740.6 1.0 33 1.0 9.4 53.3 39 SA36A 40.044.2 1.0 36 1.0 8.6 58.1 41 SA40A 44.449.1 1.0 40 1.0 7.8 64.5 46 SA43A 47.852.8 1.0 43 1.0 7.2 69.4 50 SA45A 50.055.3 1.0 45 1.0 6.9 72.7 52 SA48A 53.358.9 1.0 48 1.0 6.5 77.4 56 SA51A 56.762.7 1.0 51 1.0 6.1 82.4 61 SA54A 60.066.3 1.0 54 1.0 5.7 87.1 65 SA58A 64.471.2 1.0 58 1.0 5.3 93.6 70 SA60A 66.773.7 1.0 60 1.0 5.2 96.8 71 SA64A 71.178.6 1.0 64 1.0 4.9 103 76 SA70A 77.886.0 1.0 70 1.0 4.4 113 85 SA75A 83.392.1 1.0 75 1.0 4.1 121 91 SA78A 86.795.8 1.0 78 1.0 4 126 95 SA85A 94.4104 1.0 85 1.0 3.6 137 103 SA90A 100111 1.0 90 1.0 3.4 146 110 SA100A 111 123 1.0 100 1.0 3.1 162 123 SA110A 122 135 1.0 110 1.0 2.8 177 133 SA120A 133 147 1.0 120 1.0 2.6 193 146 SA130A 144 159 1.0 130 1.0 2.4 209 158 SA150A 167 185 1.0 150 1.0 2.1 243 184 SA160A 178 197 1.0 160 1.0 1.9 259 196 SA170A 189 209 1.0 170 1.0 1.8 275 208 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types with V of 10 V and less the I limit is doubled WM D (4) For the bi-directional SA5.0CA, the maximum V is 7.25 V BR (5) All terms and symbols are consistent with ANSI/EEE CA62.35 Revision: 18-Sep-12 Document Number: 88378 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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