SBL3040PT-E3/45 Vishay

SBL3030PT, SBL3040PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop 3 High forward surge capability 2 1 High frequency operation TO-3P (TO-247AD) Solder dip 275 C max. 10 s, per JESD 22-B106 PIN 2 Material categorization: for definitions of compliance PIN 1 PIN 3 please see www.vishay.com/doc 99912 CASE TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage, high frequency rectifier of switchin g I 30 A mode power supplies, freewheeling diodes, DC/DC F(AV) converters, or polarity protection application. V 30 V, 40 V RRM I 275 A FSM MECHANICAL DATA V 0.55 V F Case: TO-3P (TO-247AD) T max. 125 C J Molding compound meets UL 94 V-0 flammability rating Package TO-3P (TO-247AD) Base P/N-E3 - RoHS-compliant, commercial grade Circuit configuration Common cathode Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SBL3030PT SBL3040PT UNIT Maximum repetitive peak reverse voltage V 30 40 V RRM Maximum RMS voltage V 21 28 V RWM Maximum DC blocking voltage V 30 40 V DC Maximum average forward rectified current (fig. 1) I 30 A F(AV) Peak forward surge current 8.3 ms single half I 275 A FSM sine-wave superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +125 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS SBL3030PT SBL3040PT UNIT Maximum instantaneous forward voltage (1) V 15 A 0.55 V F per diode T = 25 C 1.0 mA C Maximum instantaneous reverse current at rated (1) I R DC blocking voltage per diode T = 100 C 75 mA C Note (1) Pulse test: 300 s pulse width, 1 % duty cycle Revision: 27-May-2020 Document Number: 88732 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SBL3030PT, SBL3040PT www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SBL3030PT SBL3040PT UNIT Thermal resistance, junction to case per diode R 1.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD SBL3030PT-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 30 100 Resistive or Inductive Load T = 125 C J Pulse Width = 300 s 24 1 % Duty Cycle 10 18 1 12 T = 25 C J 0.1 6 0 0.01 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 300 100 T = T Max. J J 250 T = 125 C 8.3 ms Single Half Sine-Wave J 10 200 T = 75 C 1 150 J 100 0.1 50 T = 25 C J 0.01 0 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Per Diode Per Diode Revision: 27-May-2020 Document Number: 88732 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)