33 3 SFH601 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection FEATURES Isolation test voltage, 5000 V RMS Low coupling capacitance High common mode transient immunity Storage temperature, -55 to +150 C 1 6 A B Material categorization: for definitions of compliance please see C 2 5 C www.vishay.com/doc 99912 NC 3 4 E APPLICATIONS Telecom Industrial controls Battery powered equipment Office machines Programmable controllers 23030 AGENCY APPROVALS DESIGN SUPPORT TOOLS AVAILABLE UL cUL 3D Models Design Tools Related Documents DIN EN 60747-5-5 (VDE 0884-5) available with option 1 CQC DESCRIPTION The SFH601 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling device is designed for signal transmission between two electrically separated circuits. ORDERING INFORMATION S F H 6 01 - X 0 PART NUMBER CTR PACKAGE OPTION TAPE AND BIN REEL AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, CQC 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6 SFH601-1 SFH601-2 SFH601-3 - SMD-6, option 7 SFH601-3X007T SFH601-4X007T SMD-6, option 9 - - SFH601-3X009 - VDE, UL, cUL, CQC 40 to 80 63 to 125 100 to 200 160 to 320 DIP-6, 400 mil, option 6 - SFH601-2X016 SFH601-3X016 - SMD-6, option 7 - - SFH601-3X017T - Note Additional options may be possible, please contact sales office Rev. 1.8, 18-Jun-2019 Document Number: 83663 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD DSFH601 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Total power dissipation P 100 mW diss OUTPUT Collector emitter voltage V 100 V CEO Emitter base voltage V 7V EBO Collector current I 50 mA C Power dissipation P 150 mW diss COUPLER Storage temperature range T -55 to +150 C stg Ambient temperature range T -55 to +100 C amb Soldering temperature t = 10 s T 260 C sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 70 10000 60 Phototransistor 150 50 1000 1000 40 100 30 IR Diode 100 100 20 50 10 0 10 0 10 0 20406080 100 120 0 20406080 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V - 1.45 1.65 V F F Breakdown voltage I = 10 A V 6- - V R BR Reverse current V = 6 V I -0.01 10 A R R Capacitance V = 0 V, f = 1 kHz C - - 100 pF F I OUTPUT Collector emitter leakage current V =10 V I - 2 50 nA CE CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 2.5 mA V - 0.125 0.4 V F C CEsat Coupling capacitance V = 0, f = 1 MHz C -0.6 - pF I-O IO Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Rev. 1.8, 18-Jun-2019 Document Number: 83663 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) diss 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line