SFH610A, SFH6106 Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS FEATURES SFH610A Good CTR linearity depending on forward A 1 4 E current C 2 3 C Isolation test voltage, 5300 V RMS High collector emitter voltage, V = 70 V CEO Low saturation voltage Fast switching times Low CTR degradation Temperature stable Low coupling capacitance End stackable, 0.100 (2.54 mm) spacing SFH6106 High common mode interference immunity E A 1 4 Lead (Pb)-free component C 2 3 C Component in accordance to RoHS 2002/95/EC and i179056 WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The SFH610A (DIP) and SFH6106 (SMD) feature a high UL1577, file no. E52744 system code H or J, double current transfer ratio, low coupling capacitance and high protection isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar DIN EN 60747-5-5 (VDE 0884) available with option 1 phototransistor detector, and is incorporated in a plastic CSA 93751 DIP-4 or SMD package. BSI IEC 60950 IEC 60065 The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V or DC. Specifications subject to change. RMS ORDER INFORMATION PART REMARKS SFH610A-1 CTR 40 % to 80 %, DIP-4 SFH610A-2 CTR 63 % to 125 %, DIP-4 SFH610A-3 CTR 100 % to 200 %, DIP-4 SFH610A-4 CTR 160 % to 320 %, DIP-4 SFH610A-5 CTR 250 % to 500 %, DIP-4 SFH6106-1 CTR 40 % to 80 %, SMD-4 SFH6106-2 CTR 63 % to 125 %, SMD-4 SFH6106-3 CTR 100 % to 200 %, SMD-4 SFH6106-4 CTR 160 % to 320 %, SMD-4 SFH6106-5T CTR 250 % to 500 %, SMD-4, tape and reel SFH610A-1X006 CTR 40 % to 80 %, DIP-4 400 mil SFH610A-1X018T CTR 40 % to 80 %, SMD-4 400 mil, wide leadspread SFH610A-2X006 CTR 63 % to 125 %, DIP-4 400 mil SFH610A-3X006 CTR 100 % to 200 %, DIP-4 400 mil SFH610A-3X007 CTR 100 % to 200 %, SMD-4 SFH610A-4X006 CTR 160 % to 320 %, DIP-4 400 mil Note For additional information on the available options refer to option information. Document Number: 83666 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 2.0, 10-Dec-08 607 SFH610A, SFH6106 Optocoupler, Phototransistor Output, Vishay Semiconductors High Reliability, 5300 V RMS (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R DC forward current I 60 mA F Surge forward current t 10 s I 2.5 A FSM Power dissipation P 100 mW diss OUTPUT Collector emitter voltage V 70 V CE Emitter collector voltage V 7V EC I 50 mA C Collector current t 1.0 ms I 100 mA p C Power dissipation P 150 mW diss COUPLER Isolation test voltage V 5300 V ISO RMS between emitter and detector Creepage distance 7mm Clearance distance 7mm Insulation thickness between 0.4 mm emitter and detector Comparative tracking index per DIN 175 IEC112/VDE 0303 part 1 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature range T - 55 to + 150 C stg Ambient temperature range T - 55 to + 100 C amb max. 10 s, dip soldering distance (2) Soldering temperature T 260 C sld to seating plane 1.5 mm Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V 1.25 1.65 V F F Reverse current V = 6 V I 0.01 10 A R R Capacitance V = 0 V, f = 1 MHz C 13 pF R O Thermal resistance R 750 K/W thja OUTPUT Collector emitter capacitance V = 5 V, f = 1 MHz C 5.2 pF CE CE Thermal resistance R 500 K/W thja SFH610A-1 I 250 nA CEO SFH6106-1 I 250 nA CEO SFH610A-2 I 250 nA CEO SFH6106-2 I 250 nA CEO SFH610A-3 I 5 100 nA CEO Collector emitter leakage current V = 10 V CE SFH6106-3 I 5 100 nA CEO SFH610A-4 I 5 100 nA CEO SFH6106-4 I 5 100 nA CEO SFH610A-5 I 5 100 nA CEO SFH6106-5T I 5 100 nA CEO www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83666 608 Rev. 2.0, 10-Dec-08