33 3 Preliminary SFH619A www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, 300 V BV CEO FEATURES High collector emitter voltage, V = 300 V CEO Low coupling capacitance A 1 4 C High common mode transient immunity Isolation rated voltage 5000 V RMS C 2 3 E Standard plastic DIP-4 package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 23095 APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE Telecom Industrial controls 3D Models Design Tools Related Battery powered equipment Documents Office machines DESCRIPTION Programmable controllers The SFH619A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon photodarlington AGENCY APPROVALS detector, and is incorporated in a plastic DIP-4 package. UL It features a high current transfer ratio, low coupling cUL capacitance, and high isolation voltage. CQC The coupling device is designed for signal transmission between two electrically separated circuits. ORDERING INFORMATION S F H 619 A - X 00 T PART NUMBER PACKAGE OPTION TAPE AND REEL AGENCY CERTIFIED / PACKAGE CTR (%) UL, BSI, FIMKO 1000 DIP-4 SFH619A (1) SMD-4, option 7 SFH619A-X007T (1) SMD-4, option 9 SFH619A-X009T Notes Additional options may be possible, please contact sales office (1) Also available in tubes do not put T on the end Rev. 2.0, 18-Feb-2019 Document Number: 83674 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD DPreliminary SFH619A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 50 mA F Power dissipation P 70 mW diss OUTPUT Collector emitter voltage V 300 V CEO Emitter collector voltage V 0.3 V ECO Collector current I 125 mA C Power dissipation P 150 mW diss COUPLER Total power dissipation P 200 mW tot Storage temperature T -55 to +125 C stg Operating temperature T -55 to +100 C amb Soldering temperature t = 10 s T 260 C sld Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 60 10000 50 Phototransistor 150 1000 40 1000 100 30 IR diode 100 20 100 50 10 0 10 0 10 0 20406080 100 120 0 20406080 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature Rev. 2.0, 18-Feb-2019 Document Number: 83674 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) diss 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line