P
VIN GND
GL
V C
GND
IN_S
V
CC
SiC651, SiC651A
www.vishay.com
Vishay Siliconix
50 A VRPower Integrated Power Stage
DESCRIPTION FEATURES
Highly efficient
The SiC651 and SiC651A are high frequency integrated
power stage optimized for synchronous buck applications - Thermally enhanced PowerPAK MLP55-31L
to offer high current, high efficiency, and high power density package
performance with very low shutdown current. Packaged in
- Vishays latest TrenchFET technology and low
Vishays proprietary 5 mm x 5 mm MLP package, SiC651
side MOSFET with integrated Schottky diode
and SiC651A enable voltage regulator designs to deliver
- Integrated, low impedance, bootstrap switch
up to 50 A continuous current per phase.
- Power MOSFETs optimized for 19 V input stage
- Supports PS4 mode light load requirement with low
The internal power MOSFETs utilize Vishays latest
shutdown supply current (5 V, 3 A)
TrenchFET technology that delivers industry benchmark
- Zero current detection for improved light load efficiency
performance to significantly reduce switching and
Highly versatile
conduction losses.
- 5 V and 3.3 V PWM logic with tri-state and hold-off timer
- 5 V DSBL#, ZCD_EN# logic with PS4 state support
The SiC651 and SiC651A incorporates an advanced
- High frequency operation up to 2 MHz
MOSFET gate driver IC that features high current driving
Robust and reliable
capability, adaptive dead-time control, an integrated
- Delivers in excess of 50 A continuous current,
bootstrap switch, and user selectable zero current detection
70 A, peak (10 ms) and 100 A, peak (10 s)
to improve light load efficiency. The driver is also compatible
- Over current protection
with a wide range of PWM controllers, supports tri-state
- Over temperature flag
PWM, and 5 V / 3.3 V PWM logic.
- Over temperature protection
- Under-voltage lockout protection
The device also supports PS4 mode to reduce power
- High side MOSFET short detection
consumption when the system is in standby state.
Effective monitoring and reporting
- Accurate temperature reporting
The SiC651 and SiC651A offer operating temperature
- Warnings and faults reporting flag
monitoring, protection features, and warning flags that
Material categorization: for definitions of compliance
improve system monitoring and reliability.
please see www.vishay.com/doc?99912
APPLICATIONS
Multi-phase VRDs for computing, graphics card and
memory
Intel core processor power delivery
-V , V , V
CORE GRAPHICS SYSTEM AGENT
-V
CCGI
Up to 24 V rail input DC/DC VR modules
TYPICAL APPLICATION DIAGRAM
5V V
IN
BOOT
PHASE
ZCD_EN#
V
SWH
V
OUT
DSBL# Gate
PWM
driver
controller
PWM
T /FAULT
MON
Fig. 1 - Typical Application Diagram
S19-0862-Rev. B, 21-Oct-2019 Document Number: 76858
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiC651, SiC651A
www.vishay.com
Vishay Siliconix
PINOUT CONFIGURATION
33
31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31
PWM 1 23 V V 23 1 PWM
SWH
SWH
GL
32
ZCD_EN# ZCD_EN#
2 22 V V 22 2
SWH
SWH
C
GND
N.C. 3 3 N.C.
21 V V 21
SWH
SWH
C V 20 C
4 20 V 4
GND SWH SWH GND
35
19 V V 19
BOOT 5 5 BOOT
SWH SWH
P
GND
V 18
V 6 18 V 6 V
SWH 34
IN_S SWH IN_S
V
17 V V 17 IN
PHASE 7 SWH 7 PHASE
SWH
V 16
16 V
V 8 SWH SWH 8 V
IN IN
9110 11 12 13 14 15 514131211109
Top view Bottom view
Fig. 2 - Pin Configuration
PIN CONFIGURATION
PIN NUMBER NAME FUNCTION
1PWM PWM input
The ZCD_EN# pin enables or disables diode emulation. When ZCD_EN# is LOW, diode emulation is
allowed. When ZCD_EN# is HIGH, continuous conduction mode is forced.
2 ZCD_EN#
ZCD_EN# can also be put in a high impedance mode by floating the pin. If ZCD_EN# is floating, the
device shuts down and consumes typically 3 A (10 A max.) current.
3 N.C. Not connected
5 BOOT High side driver bootstrap voltage
4, 32 C Analog ground
GND
6V Over current protection input voltage, connect this pin to power stage input voltage
IN_S
7 PHASE Return path of high side gate driver
8 to 11, 34 V Power stage input voltage. Drain of high side MOSFET
IN
12 to 15, 28, 35 P Power ground
GND
16 to 26 V Phase node of the power stage
SWH
27, 33 GL Low side MOSFET gate signal
29 V Supply voltage
CC
30 T /FAULT Temperature monitor output, FAULT flag output
MON
31 DSBL# Disable input, active low. If DSBL# is floating, the device is enabled through internal pull-up
ORDERING INFORMATION
PART NUMBER PACKAGE MARKING CODE OPTION
SiC651CD-T1-GE3 SiC651 5 V PWM optimized
PowerPAK MLP55-31L
SiC651ACD-T1-GE3 SiC651A 3.3 V PWM optimized
SiC651DB
Reference board
SiC651ADB
S19-0862-Rev. B, 21-Oct-2019 Document Number: 76858
2
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V DSBL#
IN
T /FAULT
V
MON
IN
V V
CC
IN
P
GND
P GL
GND
V
P SWH
GND
V
P
SWH
GND
V
P SWH
GND
P
GND V
SWH
P
GND V
SWH
P
GND V
SWH
P
GND
GL
P
GND
V V
IN CC
V T /FAULT
IN
MON
V
DSBL#
IN