PGND VIN GH GL CGND VDRV SiC770CD www.vishay.com Vishay Siliconix DrMOS Integrated Power Stage DESCRIPTION FEATURES The SiC770 is an integrated power stage solution optimized Industry benchmark MOSFET with integrated for synchronous buck applications to offer high current, high Schottky diode efficiency and high power density performance. Packaged Delivers in excess of 40 A continuous current in Vishays proprietary 6 mm x 6 mm MLP package, SiC770 91 % peak efficiency enables voltage regulator design to deliver in excess of 40 A High frequency operation up to 1 MHz per phase current. Power MOSFETs optimized for 19 V input stage The internal power MOSFETs utilizes Vishays state-of-the-art TrenchFET Gen IV technology that delivers 5 V PWM logic with tri-state and hold-off industry bench-mark performance to significantly reduce Automatic skip mode operation (ZCD) for light load switching and conduction losses. efficiency The SiC770 incorporates an advanced MOSFET gate driver Built-in bootstrap Schottky diode IC that features high current driving capability, adaptive Thermal monitor flag dead-time control, and integrated bootstrap Schottky V under voltage lockout diode, a thermal warning (THWn) alerts the system of CIN excessive junction temperature. This driver is also Compliant with Intel DrMOS 4.0 specification compatible with wide range of PWM controllers with the Thermally enhanced PowerPAK MLP6x6-40L package support of tri-state PWM, 5 V PWM logic, and skip mode Material categorization: For definitions of compliance (ZCD) for improve light load efficiency. please see www.vishay.com/doc 99912 APPLICATIONS Synchronous buck converters Muliti-phase VRDs for CPU, GPU and memory DC/DC POL modules TYPICAL APPLICATION DIAGRAM 5V VIN BOOT PHASE VCIN ZCD EN SW VOUT DSBL Gate PWM Driver Controller PWM THWn Fig. 1 - SiC770 Typical Application Diagram S13-1119-Rev. A, 27-May-13 Document Number: 62727 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VIN 11 40 PWM 39 DSBL VIN 12 38 THWn VIN 13 VIN 14 37 CGND 36 GL VSWH 15 PGND 16 35 VSWH 34 VSWH PGND 17 PGND 18 33 VSWH PGND 19 32 VSWH PGND 20 31 VSWH SiC770CD www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 30 VSWH 30 VSWH ZCD EN ZCD EN 29 VSWH VCIN 2 VCIN 2 29 VSWH 28 PGND 28 PGND VDRV 3 VDRV 3 CGND CGND 27 PGND 27 PGND BOOT 4 BOOT 4 26 PGND 26 PGND CGND 5 CGND 5 VSWH VSWH 25 PGND 25 PGND GH 6 GH 6 24 PGND PHASE 7 PHASE 7 24 PGND 23 PGND 23 PGND VIN VIN 8 VIN 8 VIN 22 PGND VIN 9 22 PGND VIN 9 21 PGND VIN 10 VIN 10 21 PGND Fig. 2 - SiC770 Pin Configuration PIN DESCRIPTION PIN NAME FUNCTION 1 ZCD EN LS FET turn-off logic active low 2V Supply voltage for internal logic circuitry CIN 3V Supply voltage for internal gate driver DRV 4 BOOT High side driver bootstrap voltage 5, 37, P1 C Analog ground for the driver IC GND 6 GH High side gate signal 7 PHASE Return path of HS gate driver 8 to 14, P2 V Power stage input voltage. Drain of high side MOSFET IN 15, 29 to 35, P3 V Phase node of the power stage SWH 16 to 28 P Power ground GND 36 GL Low side gate signal 38 THWn Thermal warning open drain output 39 DSBL Disable pin active low 40 PWM PWM input logic ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE SiC770CD-T1-GE3 PowerPAK MLP66-40L SiC770CD SiC770DB Reference Board S13-1119-Rev. A, 27-May-13 Document Number: 62727 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VIN 11 40 PWM VIN 12 39 DSBL VIN 13 38 THWn VIN 14 37 CGND VSWH 15 36 GL PGND 16 35 VSWH PGND 17 34 VSWH PGND 18 33 VSWH PGND 19 32 VSWH PGND 20 31 VSWH