333 3 SL04 www.vishay.com Vishay Semiconductors Schottky Rectifier Surface-Mount FEATURES eSMP Series Available For surface mounted applications Low-profile package Ideal for automated placement 1 2 Low power loss, high efficiency Meets MSL level 1, per J-STD-020, 23020 LF maximum peak of 260 C Meets JESD 201 class 2 whisker test Wave and reflow solderable 23019 SMF (DO-219AB) AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant and commercial grade LINKS TO ADDITIONAL RESOURCES Base P/N-HE3 - RoHS-compliant and AEC-Q101 qualified Compatible to SOD-123W package case outline or 3D Models SOD-123F and SOD-123FL Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SMF (DO-219AB) TYPICAL APPLICATIONS Polarity: color band denotes cathode end For use in high frequency inverters, freewheeling, DC/DC Weight: approx. 15 mg converters, and polarity protection in commercial, industrial, Packaging codes / options: and automotive applications. 18/10K per 13 reel (8 mm tape), MOQ = 50K 08/3K per 7 reel (8 mm tape), MOQ = 30K Circuit configuration: single PARTS TABLE PART ORDERING CODE MARKING REMARKS SL04-E3-18 or SL04-E3-08 SL04 S4 Tape and reel SL04-HE3-18 or SL04-HE3-08 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage V 40 V RRM Maximum average forward rectified current (fig. 4) I 1.1 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 40 A FSM T = 25 C J(init) THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to lead R 22 K/W thJL (1) Thermal resistance junction to ambient air R 180 K/W thJA Junction temperature in DC forward current without reverse bias T 175 C j Storage temperature range T -55 to +175 C stg Note (1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 m thick) Rev. 1.7, 26-Feb-2021 Document Number: 85942 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SL04 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5 A 0.41 0.47 F T = 25 C J I = 1.1 A 0.48 0.54 F I = 0.5 A 0.34 - F (1) Instantaneous forward voltage T = 100 C V V J F I = 1.1 A 0.43 - F I = 0.5 A 0.31 - F T = 125 C J I = 1.1 A 0.42 - F T = 25 C 10 20 A J Reverse current V = 40 V T = 100 C I 1.2 2.6 mA R J R T = 125 C 4.5 13 mA J Typical junction capacitance V = 4.0 V, 1 MHz C 65 - pF R D Note (1) Pulse test: 300 s pulse width, 1 % duty cycle RATINGS AND CHARACTERISTICS CURVES (T = 25 C, unless otherwise specified) amb 10 1.0E+0 T at 25 C T at 75 C J J T at 100 C T at 125 C J J 100.0E-3 T at 150 C T at 175 C J J 1 10.0E-3 1.0E-3 0.1 100.0E-6 typical at 25 C 10.0E-6 0.01 typical at 100 C typical at 125 C 1.0E-6 typical at 150 C 0.001 100.0E-9 0.00 0.20 0.40 0.60 0.80 1.00 1.20 010 20 30 40 V V V V F R Fig. 1 - Typical Forward Characteristics Fig. 3 - Typical Reverse Characteristics 200 1.2 180 1.0 f = 1 MHz 160 140 0.8 120 0.6 100 80 0.4 60 R = 22K/W 40 thJL 0.2 R = 180K/W 20 thJA 0 0.0 0.1 1 10 100 0 25 50 75 100 125 150 175 V V Lead Temperature (C) R Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage Fig. 4 - Forward Current Derating Curve Rev. 1.7, 26-Feb-2021 Document Number: 85942 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 C pF I A D F Average Forward Current A I A R