X-On Electronics has gained recognition as a prominent supplier of SM15T24A-E3/57T ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SM15T24A-E3/57T ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SM15T24A-E3/57T Vishay

SM15T24A-E3/57T electronic component of Vishay
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See Product Specifications
Part No.SM15T24A-E3/57T
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: Diode TVS Single Uni-Dir 20.5V 1.5KW 2-Pin SMC T/R
Datasheet: SM15T24A-E3/57T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
850: USD 0.2553 ea
Line Total: USD 217.01 
Availability - 0
MOQ: 850  Multiples: 850
Pack Size: 850
Availability Price Quantity
0
Ship by Mon. 25 Nov to Fri. 29 Nov
MOQ : 850
Multiples : 850
850 : USD 0.2553

   
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RoHS - XON
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Working Voltage
Clamping Voltage
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Minimum Operating Temperature
Maximum Operating Temperature
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Peak Surge Current
Height
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Pd - Power Dissipation
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We are delighted to provide the SM15T24A-E3/57T from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SM15T24A-E3/57T and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SM15T Series www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional 1500 W peak pulse power capability with a 10/1000 s waveform Excellent clamping capability DO-214AB (SMC J-Bend) Low inductance Meets MSL level 1, per J-STD-020, LF maximum peak PRIMARY CHARACTERISTICS of 260 C V 5.8 V to 188 V WM AEC-Q101 qualified V uni-directional 6.8 V to 220 V BR Material categorization: for definitions of compliance V bi-directional 6.8 V to 220 V BR please see www.vishay.com/doc 99912 P 1500 W PPM P 6.5 W D TYPICAL APPLICATIONS I (uni-directional only) 200 A FSM Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting T max. 150 C J on ICs, MOSFET, signal lines of sensor units for consumer, Polarity Uni-directional, bi-directional computer, industrial, automotive, and telecommunication. Package DO-214AB (SMC J-Bend) MECHANICAL DATA DEVICES FOR BI-DIRECTION APPLICATIONS Case: DO-214AB (SMC J-Bend) For bi-directional devices use CA suffix (e.g. SM15T12CA). Molding compound meets UL 94 V-0 flammability rating Electrical characteristics apply in both directions. Base P/N-E3 - RoHS-compliant and industrial grade Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified APPLICATION NOTES A 1500 W (SMC) device is normally selected when the threat Terminals: Matte tin plated leads, solderable per of transients is from lightning induced transients, conducted J-STD-002 and JESD 22-B102 via external leads or I/O lines. It is also used to protect E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix against switching transients induced by large coils or meets JESD 201 class 2 whisker test industrial motors. Source impedance at component level in Polarity: For uni-directional types the band denotes a system is usually high enough to limit the current within the cathode end, no marking on bi-directional types peak pulse current (I ) rating of this series. In an overstress PP condition, the failure mode is a short circuit. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak power dissipation with a 10/1000 s waveform (fig. 1) P 1500 W PPM (1) Peak pulse current with a 10/1000 s waveform (fig. 3) I See next table A PPM Power dissipation on infinite heatsink at T = 50 C P 6.5 W A D (2) Peak forward surge current 10 ms single half sine-wave uni-directional only I 200 A FSM Operating junction and storage temperature range T , T -65 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. A (2) Mounted on 0.31 x 0.31 (8.0 mm x 8.0 mm) copper pads to each terminal Revision: 06-Feb-15 Document Number: 88380 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SM15T Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN CLAMPING CLAMPING LEAKAGE DEVICE TEST STAND-OFF VOLTAGE VOLTAGE VOLTAGE CURRENT T MARKING CURRENT VOLTAGE (2) (1) V AT I V AT I V AT I BR T C PPM C PPM TYPE I AT V MAX. RM RM CODE I V T RM (3) -4 (V) (10/1000 s) (8/20 s) I 10 /C D (mA) (V) (A) UNI BI MIN. MAX. (V) (A) (V) (A) SM15T6V8A GDE7 GDE7 6.45 7.14 10 5.80 1000 10.5 143 13.4 746 5.7 SM15T7V5A GDK7 BDK7 7.13 7.88 10 6.40 500 11.3 132 14.5 690 6.1 SM15T10A GDT7 BDT7 9.50 10.5 1.0 8.55 10 14.5 103 18.6 538 7.3 SM15T12A GDX7 BDX7 11.4 12.6 1.0 10.2 5.0 16.7 90.0 21.7 461 7.8 SM15T15A GEG7 GEG7 14.3 15.8 1.0 12.8 1.0 21.2 71.0 27.2 368 8.4 SM15T18A GEM7 BEM7 17.1 18.9 1.0 15.3 1.0 25.2 59.5 32.5 308 8.8 SM15T22A GET7 BET7 20.9 23.1 1.0 18.8 1.0 30.6 49.0 39.3 254 9.2 SM15T24A GEV7 GEV7 22.8 25.2 1.0 20.5 1.0 33.2 45.0 42.8 234 9.4 SM15T27A GEX7 BEX7 25.7 28.4 1.0 23.1 1.0 37.5 40.0 48.3 207 9.6 SM15T30A GFE7 BFE7 28.5 31.5 1.0 25.6 1.0 41.5 36.0 53.5 187 9.7 SM15T33A GFG7 GFG7 31.4 34.7 1.0 28.2 1.0 45.7 33.0 59.0 169 9.8 SM15T36A GFK7 BFK7 34.2 37.8 1.0 30.8 1.0 49.9 30.0 64.3 156 9.9 SM15T39A GFM7 BFM7 37.1 41.0 1.0 33.3 1.0 53.9 28.0 69.7 143 10.0 SM15T68A GGG7 GGG7 64.6 71.4 1.0 58.1 1.0 92.0 16.3 121 83 10.4 SM15T100A GGV7 GGV7 95.0 105 1.0 85.5 1.0 137 11.0 178 56 10.6 SM15T150A GHK7 GHK7 143 158 1.0 128 1.0 207 7.20 265 38 10.8 SM15T200A GHR7 GHR7 190 210 1.0 171 1.0 274 5.50 353 28 10.8 SM15T220A GHR8 GHR8 209 231 1.0 188 1.0 328 4.60 388 26 10.8 Notes (1) For bi-directional devices add suffix CA instead of A (2) V measured after I applied for 300 s square wave pulse BR T (3) For bi-polar devices with V = 10 V or under, the I limit is doubled RM RM THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Typical thermal resistance, junction to ambient air R 75 JA C/ W Typical thermal resistance, junction to lead R 15 JL Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM15T10A-E3/57T 0.211 57T 850 7 diameter plastic tape and reel SM15T10A-E3/9AT 0.211 9AT 3500 13 diameter plastic tape and reel (1) SM15T10AHE3/57T 0.211 57T 850 7 diameter plastic tape and reel (1) SM15T10AHE3/9AT 0.211 9AT 3500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 06-Feb-15 Document Number: 88380 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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