X-On Electronics has gained recognition as a prominent supplier of SM6T30A-M352 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SM6T30A-M352 ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SM6T30A-M352 Vishay

SM6T30A-M352 electronic component of Vishay
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Part No.SM6T30A-M352
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: Vishay TVS Diodes - Transient Voltage Suppressors 600W,30V 5%,UNIDIR,SMB TVS
Datasheet: SM6T30A-M352 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7500: USD 0.1133 ea
Line Total: USD 849.75 
Availability - 0
MOQ: 7500  Multiples: 7500
Pack Size: 7500
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 7500
Multiples : 7500
7500 : USD 0.1133
10500 : USD 0.1111
25500 : USD 0.1078

   
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We are delighted to provide the SM6T30A-M352 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SM6T30A-M352 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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333 3 SM6T Series www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES Available Low profile package Ideal for automated placement Glass passivated chip junction Available in unidirectional and bidirectional 600 W peak pulse power capability with a 10/1000 s waveform Available Excellent clamping capability SMB (DO-214AA) Low inductance Meets MSL level 1, per J-STD-020, LF maximum peak Cathode Anode of 260 C AEC-Q101 qualified available (unidirectional) (bidirectional) - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3D Models Use in sensitive electronics protection against voltage transients induced by inductive load switching and lightin g on ICs, MOSFET, signal lines of sensor units for consumer, PRIMARY CHARACTERISTICS computer, industrial, automotive, and telecommunication. V 5.80 V to 188 V WM V unidirectional 6.8 V to 220 V MECHANICAL DATA BR V bidirectional 6.8 V to 220 V BR Case: SMB (DO-214AA) P 600 W PPM Molding compound meets UL 94 V-0 flammability rating P 5.0 W Base P/N-E3 - RoHS-compliant, commercial grade D Base P/N-M3 - halogen-free, RoHS-compliant, commercial I (unidirectional only) 100 A FSM grade T max. 150 C J Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified Polarity Unidirectional, bidirectional Base P/NHM3 X - halogen-free, RoHS-compliant, and Package SMB (DO-214AA) AEC-Q101 qualified ( X denotes revision code e.g. A, B, ...) DEVICES FOR BIDIRECTION APPLICATIONS Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 For bidirectional devices use CA suffix (e.g. SM6T12CA). E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 Electrical characteristics apply in both directions. whisker test Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak power dissipation with a 10/1000 s waveform (fig. 1) P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform (fig. 3) I See next table A PPM Power dissipation on infinite heatsink at T = 50 C P 5.0 W A D (2) Peak forward surge current 10 ms single half sine-wave unidirectional only I 100 A FSM Operating junction and storage temperature range T , T -65 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 19-Apr-2021 Document Number: 88385 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SM6T Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN CLAMPING CLAMPING DEVICE TEST STAND-OFF LEAKAGE VOLTAGE VOLTAGE VOLTAGE T MARKING CURRENT VOLTAGE CURRENT (2) (1) V AT I V AT I V AT I BR T C PPM C PPM TYPE MAX. CODE I V I AT V T RM RM RM -4 (V) 10/1000 s 8/20 s 10 /C (mA) (V) (A) UNI BI MIN. MAX. (V) (A) (V) (A) SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7 SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3 SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59 68 9.8 SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 Notes (1) For bidirectional devices add suffix CA (2) V measured after I applied for 300 s square wave pulse BR T (3) For bi-polar devices with V = 10 V or under, the I limit is doubled RM RM THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Typical thermal resistance, junction to ambient air R 100 JA C/ W Typical thermal resistance, junction to lead R 20 JL Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM6T10A-E3/52 0.096 52 750 7 diameter plastic tape and reel SM6T10A-M3/52 SM6T10A-E3/5B 0.096 5B 3200 13 diameter plastic tape and reel SM6T10A-M3/5B (1) SM6T10AHE3 A/H 0.096 H 750 7 diameter plastic tape and reel (1) SM6T10AHM3 A/H (1) SM6T10AHE3 A/I 0.096 I 3200 13 diameter plastic tape and reel (1) SM6T10AHM3 A/I Note (1) AEC-Q101 qualified Revision: 19-Apr-2021 Document Number: 88385 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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