SM8S10AT thru SM8S43AT www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge specification (varied by test DO-218 Compatible condition) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 11.1 V to 52.8 V BR TYPICAL APPLICATIONS P (10 x 1000 s) 6600 W PPM Use in sensitive electronics protection against voltage P (10 x 10 000 s) 5200 W PPM transients induced by inductive load switching and lighting, P 8 W D especially for automotive load dump protection application. V 10 V to 43 V WM I 700 A FSM MECHANICAL DATA T max. 175 C J Case: DO-218AC Polarity Uni-directional Molding compound meets UL 94 V-0 flammability rating Package DO-218AC Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUEUNIT with 10/1000 s waveform 6600 Peak pulse power dissipation P W PPM with 10/10 000 s waveform 5200 Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 8.0 W C D (1) See next table A Peak pulse current with 10/1000 s waveform I PPM Peak forward surge current 8.3 ms single half sine-wave I 700 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Non-repetitive current pulse derated above T = 25 C A Revision: 03-Dec-2018 Document Number: 87734 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SM8S10AT thru SM8S43AT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C BREAKDOWN TYPICAL MAXIMUM MAX. PEAK MAXIMUM MAXIMUM VOLTAGE TEMP. TEST STAND-OFF REVERSE PULSE REVERSE CLAMPING V (V) BR DEVICE CURRENT VOLTAGE LEAKAGE CURRENT COEFFICIENT LEAKAGE VOLTAGE (1) TYPE I V AT V AT 10/1000 s OF V T WM WM BR AT V AT I WM PPM (mA) (V) T = 175 C WAVEFORM J T MIN. NOM. MAX. I (A) V (V) D C I (A) (A) D (%/C) SM8S10AT 11.1 11.7 12.3 5.0 10.0 15 250 388 17.0 0.069 SM8S11AT 12.2 12.9 13.5 5.0 11.0 10 150 363 18.2 0.072 SM8S12AT 13.3 14.0 14.7 5.0 12.0 10 150 332 19.9 0.074 SM8S13AT 14.4 15.2 15.9 5.0 13.0 10 150 307 21.5 0.076 SM8S14AT 15.6 16.4 17.2 5.0 14.0 10 150 284 23.2 0.078 SM8S15AT 16.7 17.6 18.5 5.0 15.0 10 150 270 24.4 0.080 SM8S16AT 17.8 18.8 19.7 5.0 16.0 10 150 254 26.0 0.081 SM8S17AT 18.9 19.9 20.9 5.0 17.0 10 150 239 27.6 0.082 SM8S18AT 20.0 21.1 22.1 5.0 18.0 10 150 226 29.2 0.083 SM8S20AT 22.2 23.4 24.5 5.0 20.0 10 150 204 32.4 0.085 SM8S22AT 24.4 25.7 26.9 5.0 22.0 10 150 186 35.5 0.086 SM8S24AT 26.7 28.1 29.5 5.0 24.0 10 150 170 38.9 0.087 SM8S26AT 28.9 30.4 31.9 5.0 26.0 10 150 157 42.1 0.088 SM8S28AT 31.1 32.8 34.4 5.0 28.0 10 150 145 45.4 0.089 SM8S30AT 33.3 35.1 36.8 5.0 30.0 10 150 136 48.4 0.090 SM8S33AT 36.7 38.7 40.6 5.0 33.0 10 150 124 53.3 0.091 SM8S36AT 40.0 42.1 44.2 5.0 36.0 10 150 114 58.1 0.091 SM8S40AT 44.4 46.8 49.1 5.0 40 10 150 102 64.5 0.092 SM8S43AT 47.8 50.3 52.8 5.0 43 10 150 95.1 69.4 0.093 Note For all types maximum V = 1.8 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum (2) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.90 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM8S10ATHE3/I 2.605 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 03-Dec-2018 Document Number: 87734 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000