X-On Electronics has gained recognition as a prominent supplier of SMAJ26AHE3/61 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMAJ26AHE3/61 ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMAJ26AHE3/61 Vishay

SMAJ26AHE3/61 electronic component of Vishay
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Part No.SMAJ26AHE3/61
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 400W 26V 5% Uni AEC-Q101 Qualified
Datasheet: SMAJ26AHE3/61 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.2371
10 : USD 0.5617
100 : USD 0.278
500 : USD 0.2085
1000 : USD 0.1568
1800 : USD 0.1337
9000 : USD 0.1253
23400 : USD 0.1137
N/A

Obsolete
   
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RoHS - XON
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Polarity
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Breakdown Voltage
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Pd - Power Dissipation
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We are delighted to provide the SMAJ26AHE3/61 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMAJ26AHE3/61 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional Available 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 W above 78 V) Excellent clamping capability SMA (DO-214AC) Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V uni-directional 6.40 V to 231 V BR V bi-directional 6.40 V to 231 V BR TYPICAL APPLICATIONS V 5.0 V to 188 V WM Use in sensitive electronics protection against voltage P 400 W, 300 W PPM transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, I 40 A FSM computer, industrial, automotive, and telecommunication. T max. 150 C J Polarity Uni-directional, bi-directional MECHANICAL DATA Package SMA (DO-214AC) Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified DEVICES FOR BI-DIRECTION APPLICATIONS Base P/NHM3 - halogen-free, RoHS-compliant, and For bi-directional use CA suffix (e.g. SMAJ10CA). AEC-Q101 qualified Electrical characteristics apply in both directions. Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 400 W PPM (1) Peak pulse current with a waveform I See next table A PPM (2) Peak forward surge current 8.3 ms single half sine-wave uni-directional only I 40 A FSM Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. Rating is 300 W above 78 V A (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 14-Jul-17 Document Number: 88390 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM TEST STAND-OFF DEVICE MARKING VOLTAGE REVERSE PEAK PULSE CLAMPING (1) CURRENT VOLTAGE CODE V AT I BR T DEVICE TYPE LEAKAGE SURGE VOLTAGE AT I V (V) T WM AT V CURRENT I WM PPM (mA) (V) (3) (2) I (A) I (A) V (V) UNI BI MIN. MAX. D PPM C (5) SMAJ5.0A AE WE 6.40 7.07 10 5.0 800 43.5 9.2 SMAJ6.0A AG WG 6.67 7.37 10 6.0 800 38.8 10.3 SMAJ6.5A AK WK 7.22 7.98 10 6.5 500 35.7 11.2 SMAJ7.0A AM WM 7.78 8.60 10 7.0 200 33.3 12.0 SMAJ7.5A AP WP 8.33 9.21 1.0 7.5 100 31.0 12.9 SMAJ8.0A AR WR 8.89 9.83 1.0 8.0 50 29.4 13.6 SMAJ8.5A AT WT 9.44 10.4 1.0 8.5 10 27.8 14.4 SMAJ9.0A AV WV 10.0 11.1 1.0 9.0 5.0 26.0 15.4 SMAJ10A AX WX 11.1 12.3 1.0 10 1.0 23.5 17.0 SMAJ11A AZ WZ 12.2 13.5 1.0 11 1.0 22.0 18.2 SMAJ12A BE XE 13.3 14.7 1.0 12 1.0 20.1 19.9 SMAJ13A BG XG 14.4 15.9 1.0 13 1.0 18.6 21.5 SMAJ14A BK XK 15.6 17.2 1.0 14 1.0 17.2 23.2 SMAJ15A BM XM 16.7 18.5 1.0 15 1.0 16.4 24.4 SMAJ16A BP XP 17.8 19.7 1.0 16 1.0 15.4 26.0 SMAJ17A BR XR 18.9 20.9 1.0 17 1.0 14.5 27.6 SMAJ18A BT XT 20.0 22.1 1.0 18 1.0 13.7 29.2 SMAJ20A BV XV 22.2 24.5 1.0 20 1.0 12.3 32.4 SMAJ22A BX XX 24.4 26.9 1.0 22 1.0 11.3 35.5 SMAJ24A BZ XZ 26.7 29.5 1.0 24 1.0 10.3 38.9 SMAJ26A CE YE 28.9 31.9 1.0 26 1.0 9.5 42.1 SMAJ28A CG YG 31.1 34.4 1.0 28 1.0 8.8 45.4 SMAJ30A CK YK 33.3 36.8 1.0 30 1.0 8.3 48.4 SMAJ33A CM YM 36.7 40.6 1.0 33 1.0 7.5 53.3 SMAJ36A CP YP 40.0 44.2 1.0 36 1.0 6.9 58.1 SMAJ40A CR YR 44.4 49.1 1.0 40 1.0 6.2 64.5 SMAJ43A CT YT 47.8 52.8 1.0 43 1.0 5.8 69.4 SMAJ45A CV YV 50.0 55.3 1.0 45 1.0 5.5 72.7 SMAJ48A CX YX 53.3 58.9 1.0 48 1.0 5.2 77.4 SMAJ51A CZ YZ 56.7 62.7 1.0 51 1.0 4.9 82.4 SMAJ54A RE ZE 60.0 66.3 1.0 54 1.0 4.6 87.1 SMAJ58A RG ZG 64.4 71.2 1.0 58 1.0 4.3 93.6 SMAJ60A RK ZK 66.7 73.7 1.0 60 1.0 4.1 96.8 SMAJ64A RM ZM 71.1 78.6 1.0 64 1.0 3.9 103 SMAJ70A RP ZP 77.8 86.0 1.0 70 1.0 3.5 113 SMAJ75A RR ZR 83.3 92.1 1.0 75 1.0 3.3 121 SMAJ78A RT ZT 86.7 95.8 1.0 78 1.0 3.2 126 SMAJ85A RV ZV 94.4 104 1.0 85 1.0 2.2 137 SMAJ90A RX ZX 100 111 1.0 90 1.0 2.1 146 SMAJ100A RZ ZZ 111 123 1.0 100 1.0 1.9 162 SMAJ110A SE VE 122 135 1.0 110 1.0 1.7 177 SMAJ120A VG VG 133 147 1.0 120 1.0 1.6 193 SMAJ130A VK VK 144 159 1.0 130 1.0 1.4 209 SMAJ150A VM VM 167 185 1.0 150 1.0 1.2 243 SMAJ160A SP VP 178 197 1.0 160 1.0 1.2 259 SMAJ170A SR VR 189 209 1.0 170 1.0 1.09 275 SMAJ188A SS VS 209 231 1.0 188 1.0 0.91 328 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V of 10 V and less, the I limit is doubled WM D (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMAJ5.0CA, the maximum V is 7.25 V BR (6) V = 3.5 V at I = 25 A (uni-directional only) F F Revision: 14-Jul-17 Document Number: 88390 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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