SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified Material categorization: For definitions of compliance DO-214AA (SMBJ) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, PRIMARY CHARACTERISTICS computer, industrial, automotive, and telecommunication. V (uni-directional) 6.4 V to 49.1 V BR V (bi-directional) 6.4 V to 49.1 V BR MECHANICAL DATA V 5.0 V to 40 V WM Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating P (uni-directional) 1000 W PPM Base P/N-E3 - RoHS-compliant, commercial grade P (bi-directional) 800 W PPM Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified P 100 W D Terminals: Matte tin plated leads, solderable per I (uni-directional only) 100 A FSM J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix T max. 150 C J meets JESD 201 class 2 whisker test Polarity Uni-directional, bi-directional Polarity: For uni-directional types the color band denotes Package DO-214AA (SMBJ) cathode end, no marking on bi-directional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT uni-directional 1000 Peak pulse power dissipation P W PPM (1)(2) with a 10/1000 s waveform (fig. 1) bi-directional 800 (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) Peak forward surge current 8.3 ms single half sine-wave uni-directional only P 100 W D Operating junction and storage temperature range T , T - 55 to 150 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 13-Dec-13 Document Number: 88422 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor UNI-DIRECTIONAL ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF PEAK DEVICE REVERSE CLAMPING (1) DEVICE V AT I CURRENT VOLTAGE PULSE SURGE BR T MARKING LEAKAGE VOLTAGE TYPE (V) I V CURRENT T WM CODE AT V AT I WM PPM (2) (mA) (V) I PPM MIN. MAX. I (A) V (V) D C (A) SMB10J5.0A 1AE 6.40 7.07 10 5.0 1000 108.7 9.2 SMB10J6.0A 1AG 6.67 7.37 10 6.0 1000 97.1 10.3 SMB10J6.5A 1AK 7.22 7.98 10 6.5 500 89.3 11.2 SMB10J7.0A 1AM 7.78 8.60 10 7.0 200 83.3 12.0 SMB10J7.5A 1AP 8.33 9.21 1.0 7.5 100 77.5 12.9 SMB10J8.0A 1AR 8.89 9.83 1.0 8.0 50 73.5 13.6 SMB10J8.5A 1AT 9.44 10.4 1.0 8.5 20 69.4 14.4 SMB10J9.0A 1AV 10.0 11.1 1.0 9.0 10 64.9 15.4 SMB10J10A 1AX 11.1 12.3 1.0 10 5.0 58.8 17.0 SMB10J11A 1AZ 12.2 13.5 1.0 11 5.0 54.9 18.2 SMB10J12A 1BE 13.3 14.7 1.0 12 5.0 50.3 19.9 SMB10J13A 1BG 14.4 15.9 1.0 13 1.0 46.5 21.5 SMB10J14A 1BK 15.6 17.2 1.0 14 1.0 43.1 23.2 SMB10J15A 1BM 16.7 18.5 1.0 15 1.0 41.0 24.4 SMB10J16A 1BP 17.8 19.7 1.0 16 1.0 38.5 26.0 SMB10J17A 1BR 18.9 20.9 1.0 17 1.0 36.2 27.6 SMB10J18A 1BT 20.0 22.1 1.0 18 1.0 34.2 29.2 SMB10J20A 1BV 22.2 24.5 1.0 20 1.0 30.9 32.4 SMB10J22A 1BX 24.4 26.9 1.0 22 1.0 28.2 35.5 SMB10J24A 1BZ 26.7 29.5 1.0 24 1.0 25.7 38.9 SMB10J26A 1CE 28.9 31.9 1.0 26 1.0 23.8 42.1 SMB10J28A 1CG 31.1 34.4 1.0 28 1.0 22.0 45.4 SMB10J30A 1CK 33.3 36.8 1.0 30 1.0 20.7 48.4 SMB10J33A 1CM 36.7 40.6 1.0 33 1.0 18.8 53.3 SMB10J36A 1CP 40.0 44.2 1.0 36 1.0 17.2 58.1 SMB10J40A 1CR 44.4 49.1 1.0 40 1.0 15.5 64.5 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) V = 3.5 V at I = 50 A (uni-directional only) F F Revision: 13-Dec-13 Document Number: 88422 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000